MJ11015G ON Semiconductor, MJ11015G Datasheet
MJ11015G
Manufacturer Part Number
MJ11015G
Description
TRANS DARL PNP 30A 120V TO3
Manufacturer
ON Semiconductor
Type
High Current, Powerr
Specifications of MJ11015G
Transistor Type
PNP - Darlington
Current - Collector (ic) (max)
30A
Voltage - Collector Emitter Breakdown (max)
120V
Vce Saturation (max) @ Ib, Ic
4V @ 300mA, 30A
Current - Collector Cutoff (max)
1mA
Dc Current Gain (hfe) (min) @ Ic, Vce
1000 @ 20A, 5V
Power - Max
200W
Frequency - Transition
4MHz
Mounting Type
Chassis Mount
Package / Case
TO-204, TO-3
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
120 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
120 V
Maximum Dc Collector Current
30 A
Power Dissipation
200 W
Maximum Operating Temperature
+ 200 C
Continuous Collector Current
30 A
Dc Collector/base Gain Hfe Min
1000
Minimum Operating Temperature
- 55 C
Current, Gain
200
Current, Input
1 A
Current, Output
30 A
Current, Output, Leakage
1
Package Type
TO-204AA (TO-3)
Polarity
PNP
Primary Type
Si
Voltage, Collector To Emitter, Saturation
4 V
Voltage, Input
5 V
Voltage, Output
120 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MJ11015GOS
MJ11015 (PNP); MJ11012,
MJ11016 (NPN)
High-Current
Complementary Silicon
Transistors
amplifier applications.
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 5
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T
Derate above 25°C @ T
Operating Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Sol-
dering Purposes for ≤ 10 Seconds
. . . for use as output devices in complementary general purpose
Resistor
High DC Current Gain −
Monolithic Construction with Built−in Base Emitter Shunt
Junction Temperature to + 200_C
h
Characteristic
FE
Rating
= 1000 (Min) @ I
MJ11016 is a Preferred Device
C
= 100°C
MJ11012
MJ11015/6
MJ11012
MJ11015/6
C
= 25°C
C
− 20 Adc
Symbol
Symbol
T
V
R
J
V
V
P
CEO
, T
T
I
I
qJC
CB
EB
C
B
D
L
stg
−55 to + 200
Value
1.15
Max
0.87
120
120
200
275
60
60
30
5
1
1
°C/W
W/°C
Unit
Unit
Vdc
Vdc
Vdc
Adc
Adc
°C
°C
W
Preferred devices are recommended choices for future use
and best overall value.
MJ11012
MJ11012G
MJ11015
MJ11015G
MJ11016
MJ11016G
BASE
COMPLEMENTARY SILICON
60 − 120 VOLTS, 200 WATTS
MJ1101x = Device Code
G
A
YY
WW
MEX
Device
30 AMPERE DARLINGTON
1
TO−204AA (TO−3)
POWER TRANSISTORS
CASE 1−07
ORDERING INFORMATION
COLLECTOR
CASE
STYLE 1
EMITTER 2
MJ11016
MJ11012
2
= Pb−Free Package
= Location Code
= Year
= Work Week
= Country of Orgin
NPN
http://onsemi.com
1
x = 2, 5 or 6
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
TO−3
TO−3
TO−3
TO−3
TO−3
TO−3
Publication Order Number:
BASE
1
100 Units/Tray
100 Units/Tray
100 Units/Tray
100 Units/Tray
100 Units/Tray
100 Units/Tray
COLLECTOR
CASE
MARKING
DIAGRAM
EMITTER 2
Shipping
MJ1101xG
MJ11015
AYYWW
PNP
MJ11012/D
MEX
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MJ11015G Summary of contents
Page 1
... Package Shipping MJ11012 TO−3 100 Units/Tray MJ11012G TO−3 100 Units/Tray (Pb−Free) MJ11015 TO−3 100 Units/Tray MJ11015G TO−3 100 Units/Tray (Pb−Free) MJ11016 TO−3 100 Units/Tray MJ11016G TO−3 100 Units/Tray (Pb−Free) Preferred devices are recommended choices for future use and best overall value. ...
Page 2
PNP MJ11015 BASE ≈ 8.0 k Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ELECTRICAL ...
Page 3
PNP MJ11015 20 k NPN MJ11012, MJ11016 700 Vdc CE 500 T = 25°C J 300 0.3 0.5 0 COLLECTOR ...
Page 4
... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...