MJ15022G ON Semiconductor, MJ15022G Datasheet
MJ15022G
Manufacturer Part Number
MJ15022G
Description
TRANS PWR NPN 16A 200V TO3
Manufacturer
ON Semiconductor
Type
Powerr
Specifications of MJ15022G
Transistor Type
NPN
Current - Collector (ic) (max)
16A
Voltage - Collector Emitter Breakdown (max)
200V
Vce Saturation (max) @ Ib, Ic
4V @ 3.2A, 16A
Current - Collector Cutoff (max)
500µA
Dc Current Gain (hfe) (min) @ Ic, Vce
15 @ 8A, 4V
Power - Max
250W
Frequency - Transition
4MHz
Mounting Type
Chassis Mount
Package / Case
TO-204, TO-3
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
200 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
16 A
Power Dissipation
250 W
Maximum Operating Temperature
+ 200 C
Continuous Collector Current
16 A
Dc Collector/base Gain Hfe Min
15
Maximum Operating Frequency
4 MHz
Minimum Operating Temperature
- 65 C
Current, Collector
16 A
Current, Gain
5
Frequency
4 MHz
Package Type
TO-204AA (TO-3)
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
0.7 °C/W
Voltage, Breakdown, Collector To Emitter
200 V
Voltage, Collector To Base
350 V
Voltage, Collector To Emitter
200 V
Voltage, Collector To Emitter, Saturation
4 V
Voltage, Emitter To Base
5 V
Number Of Elements
1
Collector-emitter Voltage
200V
Collector-base Voltage
350V
Emitter-base Voltage
5V
Collector Current (dc) (max)
16A
Dc Current Gain (min)
15
Frequency (max)
4MHz
Operating Temp Range
-65C to 200C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
2 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MJ15022GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MJ15022G
Manufacturer:
ST
Quantity:
2 000
NPN − MJ15022, MJ15024*
Silicon Power Transistors
designed for high power audio, disk head positioners and other linear
applications.
Features
•
•
•
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 10
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector−Emitter Voltage
Collector Current
Base Current − Continuous
Total Device Dissipation @ T
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Case
The MJ15022 and MJ15024 are PowerBase power transistors
High Safe Operating Area (100% Tested) − 2 A @ 80 V
High DC Current Gain − h
Pb−Free Packages are Available*
Derate above 25_C
Characteristics
Rating
− Continuous
− Peak (Note 1)
*MJ15024 is a Preferred Device
C
= 25_C
MJ15022
MJ15024
MJ15022
MJ15024
FE
= 15 (Min) @ I
Symbol
Symbol
T
V
V
V
V
R
J
P
CEO
CBO
, T
EBO
CEX
I
I
qJC
C
B
D
stg
C
= 8 Adc
−65 to +200
Value
1.43
Max
0.70
200
250
350
400
400
250
16
30
5
5
1
W/_C
_C/W
Unit
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
_C
W
Preferred devices are recommended choices for future use
and best overall value.
SILICON POWER TRANSISTORS
MJ15022
MJ15022G
MJ15024
MJ15024G
Device
200 − 250 VOLTS, 250 WATTS
MJ1502x = Device Code
G
A
Y
WW
MEX
ORDERING INFORMATION
MARKING DIAGRAM
http://onsemi.com
16 AMPERES
TO−204AA (TO−3)
= Pb−Free Package
= Assembly Location
= Year
= Work Week
= Country of Origin
(Pb−Free)
(Pb−Free)
CASE 1−07
Package
TO−204
TO−204
TO−204
TO−204
MJ1502xG
STYLE 1
x = 2 or 4
AYWW
MEX
Publication Order Number:
100 Units / Tray
100 Units / Tray
100 Units / Tray
100 Units / Tray
Shipping
MJ15022/D
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MJ15022G Summary of contents
Page 1
... T −65 to +200 J stg Symbol Max Unit _C/W 0.70 R qJC MJ15022 MJ15022G MJ15024 MJ15024G Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com 16 AMPERES 200 − 250 VOLTS, 250 WATTS TO−204AA (TO−3) CASE 1−07 STYLE 1 MARKING DIAGRAM ...
Page 2
ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...
Page 3
C ib 1000 500 C ob 100 40 0.3 0 REVERSE VOLTAGE (VOLTS) R Figure 2. Capacitances 200 T = 100°C J 100 T = 25° 5.0 1.0 ...
Page 4
... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...