MJE3055TG ON Semiconductor, MJE3055TG Datasheet
MJE3055TG
Manufacturer Part Number
MJE3055TG
Description
TRANS PWR NPN 10A 60V TO220AB
Manufacturer
ON Semiconductor
Type
Powerr
Specifications of MJE3055TG
Transistor Type
NPN
Current - Collector (ic) (max)
10A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
8V @ 3.3A, 10A
Current - Collector Cutoff (max)
700µA
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 4A, 4V
Power - Max
75W
Frequency - Transition
2MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
10 A
Power Dissipation
75 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
10 A
Dc Collector/base Gain Hfe Min
20
Maximum Operating Frequency
2 MHz
Minimum Operating Temperature
- 55 C
Current, Collector
10 A
Current, Gain
5
Frequency
2 MHz
Package Type
TO-220AB
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
1.67 °C/W
Voltage, Breakdown, Collector To Emitter
60 V
Voltage, Collector To Base
70 V
Voltage, Collector To Emitter
60 V
Voltage, Collector To Emitter, Saturation
8 V
Voltage, Emitter To Base
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MJE3055TGOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MJE3055TG
Manufacturer:
ON/安森美
Quantity:
20 000
MJE2955T (PNP)
MJE3055T (NPN)
Complementary Silicon
Plastic Power Transistors
switching applications.
Features
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Safe Area Curves are indicated by Figure 1. Both limits are applicable and
*For additional information on our Pb-Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T
Derate above 25°C
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction-to-Case
These devices are designed for use in general-purpose amplifier and
DC Current Gain Specified to 10 A
High Current Gain - Bandwidth Product -
Pb-Free Packages are Available*
must be observed.
f
Characteristics
T
= 2.0 MHz (Min) @ I
= 500 mAdc
Rating
Preferred Device
C
= 25°C
C
(Note 1)
Symbol
Symbol
T
V
J
V
V
q
P
CEO
, T
I
I
CB
EB
JC
C
B
D
stg
-55 to +150
Value
Max
1.67
5.0
6.0
0.6
60
70
10
75
1
W/°C
°C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
Adc
°C
W
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
COMPLEMENTARY SILICON
POWER TRANSISTORS
MJExx55 = Device Code
G
A
Y
WW
60 VOLTS - 75 WATTS
1
ORDERING INFORMATION
2
3
MARKING DIAGRAM
10 AMPERE
= Pb-Free Package
= Assembly Location
= Year
= Work Week
MJExx55G
xx = 29 or 30
AY WW
CASE 221A-09
TO-220AB
STYLE 1
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MJE3055TG Summary of contents
Page 1
... Recommended Operating Conditions may affect device reliability. 1. Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. C Symbol ...
Page 2
ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...
Page 3
... J 1.6 1 0.8 BE(sat 3 0 CE(sat 0.1 0.2 0.3 0.5 1 COLLECTOR CURRENT (AMP) C ORDERING INFORMATION Device MJE2955T MJE2955TG MJE3055T MJE3055TG MJE2955T (PNP) MJE3055T (NPN 2 1.0 2.0 5 MJE3055T 1.4 T 1.2 J 1.0 0.8 V BE(sat) 0.6 0.4 0.2 V CE(sat) 0 2.0 3.0 5.0 10 0.1 Figure 4. “ ...
Page 4
MJE2955T (PNP) MJE3055T (NPN) PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. SEATING -T- ...