MAX2630EUS+T Maxim Integrated Products, MAX2630EUS+T Datasheet - Page 2

• Manufacturer Part Number: MAX2630EUS+T
• Description: RF Amplifier VHF-to-Microwave, 3V , General Purpose Am
• Manufacturer: Maxim Integrated Products
• Type: General Purpose Amplifierr

Specifications of MAX2630EUS+T

• Operating Frequency: 800 MHz to 1000 MHz
• P1db: - 11 dB
• Noise Figure: 3.8 dB
• Bandwidth: 1000 MHz
• Operating Supply Voltage: 3 V, 5 V
• Supply Current: 11 mA
• Maximum Power Dissipation: 320 mW
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Number Of Channels: 1 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
V
Input Power.........................................................................5dBm
OUT Current .....................................................................±12mA
IN to GND Voltage ...................................................-1.2V to 1.2V
Bias to GND Voltage ....................................................0.0V to 3V
Voltage at SHDN Input
Current into SHDN Input (MAX2631/MAX2633).................100µA
VHF-to-Microwave, +3V,
General-Purpose Amplifiers
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
otherwise noted.)
2
Note 1: Guaranteed by design and characterization.
CC
Operating Temperature Range
Supply Voltage
Power Gain
Noise Figure
Output 1dB Compression Point
Output IP3
Input Voltage Standing-Wave Ratio
Output Voltage Standing-Wave Ratio
Supply Current
Shutdown Supply Current
SHDN Input Low Voltage
SHDN Input High Voltage
SHDN Input Bias Current
CC
(MAX2631/MAX2633) ............................-0.3V to (V
_______________________________________________________________________________________
to GND ................................................................-0.3V to 6V
CAUTION! ESD SENSITIVE DEVICE
= +3V, Z
PARAMETERS
0
= 50Ω, f
IN
= 900MHz, R
BIAS
(Note 1)
T
T
f
f
R
R
R
MAX2631/MAX2633
MAX2631/MAX2633, V
MAX2631/MAX2633, V
MAX2631/
MAX2633
IN
IN
A
A
BIAS
BIAS
BIAS
= 10kΩ (MAX2632/MAX2633), V
= +25°C
= T
= 800MHz to 1000MHz
= 800MHz to 1000MHz
MIN
= 40kΩ
=10kΩ
= 500Ω
CC
to T
+ 0.3V)
MAX
V
V
V
CC
CC
CC
CONDITIONS
(Note 1)
= 3V, T
= 3V, T
= 2.7V to 5.5V, T
V
V
SHDN
SHDN
CC
CC
= 2.7V to 5.5V
= 2.7V to 5.5V
Continuous Power Dissipation (T
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
A
A
= V
= GND
= +25°C
= T
SOT143 (derate 4mW/°C above +70°C) .....................320mW
SOT23-5 (derate 7.1mW/°C above +70°C).................571mW
SOT23-6 (derate 7.1mW/°C above +70°C).................571mW
CC
MIN
SHDN
to T
A
= +25°C
MAX
= V
(Note1)
CC
(MAX2631/MAX2633), T
MIN
-40
2.7
9.4
5.5
4.2
5.2
2.0
11
15
A
= +70°C)
1.25:1
1.3:1
<0.1
TYP
13.4
-11
3.8
1.3
6.5
6.5
6.5
17
-1
A
MAX
= +25°C, unless
16.5
18.4
11.0
0.45
5.5
1.5
8.0
9.2
85
30
1
1
degrees
UNITS
dBm
dBm
mA
dB
dB
µA
µA
V
V
V