MAX2370ETM+T Maxim Integrated Products, MAX2370ETM+T Datasheet - Page 10

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MAX2370ETM+T

Manufacturer Part Number
MAX2370ETM+T
Description
RF Transmitter IC TRANSMITTER QUAD-EP
Manufacturer
Maxim Integrated Products
Datasheet

Specifications of MAX2370ETM+T

Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Internal to the IC, the charge pump has a leakage of less
than 10nA. This is equivalent to a 300MΩ shunt resistor.
The charge-pump output must see an extremely high
DC resistance of greater than 300MΩ. This minimizes
charge-pump spurs at the comparison frequency. Make
sure there is no solder flux under the varactor or loop filter
and use low-leakage capacitors.
The MAX2370 EV kit can be used as a starting point for
layout. For best performance, take into consideration
power-supply issues as well as RF, LO, and IF layout.
To minimize coupling between different sections of the
IC, the ideal power-supply layout is a star configuration,
which has a large decoupling capacitor at a central
V
each going to a separate V
the end of each trace is a bypass capacitor with imped-
ance to ground less than 1Ω at the frequency of inter-
est. This arrangement provides local decoupling at
each V
tor for a low-inductance ground connection. Also, con-
nect the exposed paddle to the PC board GND with
multiple vias to provide the lowest inductance ground
connection possible.
Complete 450MHz Quadrature Transmitter
10
CC
______________________________________________________________________________________
node. The V
CC
pin. Use at least one via per bypass capaci-
CC
Layout Considerations
traces branch out from this node,
CC
Power-Supply Layout
pin of the MAX2370. At
The layout of a matching network can be very sensitive to
parasitic circuit elements. To minimize parasitic induc-
tance, keep all traces short and place components as
close to the IC as possible. To minimize parasitic capaci-
tance, a cutout in the ground plane (and any other planes)
below the matching network components can be used.
Keep traces short on the high-impedance ports (e.g., IF
inputs and outputs) to minimize shunt capacitance.
Keep the traces coming out of the tank short to reduce
series inductance and shunt capacitance. Keep the
inductor pads and coupling capacitor pads small to
minimize stray shunt capacitance.
PROCESS: BiCMOS
Matching Network Layout
Chip Information
Tank Layout

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