ZXTP25020CFH Diodes Zetex, ZXTP25020CFH Datasheet - Page 4

• Manufacturer Part Number: ZXTP25020CFH
• Description: TRANS PNP 20V 4A MED PWR SOT23-3
• Manufacturer: Diodes Zetex

Specifications of ZXTP25020CFH

• Transistor Type: PNP
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 210mV @ 200mA, 4A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 10mA, 2V
• Power - Max: 1.25W
• Frequency - Transition: 285MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: ZXTP25020CFHTA; ZXTP25020CFHTR

Electrical characteristics (at T
Issue 3 - March 2008
© Zetex Semiconductors plc 2008
(*) Measured under pulsed conditions. Pulse width
NOTES:
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (base open)
Emitter-base breakdown
voltage
Emitter-collector breakdown
voltage (reverse blocking)
Emitter-collector breakdown
voltage (base open)
Collector-base cut-off
current
Emitter-base cut-off current I
Collector-emitter saturation
voltage
Base-emitter saturation
voltage
Base-emitter turn-on voltage
Static forward current
transfer ratio
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
Symbol
BV
BV
BV
BV
BV
I
V
V
V
h
f
C
t
t
t
t
CBO
EBO
T
d
r
s
f
FE
CE(sat)
BE(sat)
BE(on)
OBO
CBO
CEO
EBO
ECX
ECO
amb
= 25°C unless otherwise stated)
Min.
200
150
-25
-20
85
-7
-7
-7
300 s; duty cycle
4
Typ.
-120
-150
-930
-810
32.4
38.4
49.2
-8.2
-8.0
-8.8
350
250
140
285
168
-50
-35
<-1
<-1
-43
-70
40
55
-1050
Max.
-100
-170
-210
-900
500
-50
-20
-50
-55
40
2%.
MHz I
Unit Conditions
mV
mV
mV
mV
mV
mV
nA
nA
pF
ns
ns
ns
ns
V
V
V
V
V
A
ZXTP25020CFH
I
I
I
I
or -0.25 < V
I
V
V
V
I
I
I
I
I
I
I
I
I
I
f = 100MHz
V
V
I
I
C
C
E
E
E
C
C
C
C
C
C
C
C
C
C
C
C
B1
CB
CB
EB
CB
CC
= -100 A
= -10mA
= -100 A
= -1A, I
= -1A, I
= -2A, I
= -4A, I
= -4A, I
= -4A, V
= -10mA, V
= -1A, V
= -4A, V
= -10A, V
= -50mA, V
= -750mA,
= -100 A
= -100 A
= I
= -5.6V
= -20V
= -10V, f = 1MHz
= -15V.
= -20V, T
B2
= -15mA
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B
B
B
B
B
CE
CE
CE
(*)
= -100mA
= -20mA
= -40mA
= -200mA
= -200mA
(*)
(*)
CE
BC
amb
= -2V
= -2V
= -2V
CE
CE
R
= -2V
< 0.25V
BC
= -2V
= -10V
= 100°C
< 10k
(*)
(*)
(*)
(*)
(*)
(*)
(*)
(*)
(*)
(*)
(*)