FZT605TC Diodes Zetex, FZT605TC Datasheet
FZT605TC
Manufacturer Part Number
FZT605TC
Description
TRANSISTOR DARL NPN SOT223
Manufacturer
Diodes Zetex
Datasheet
1.FZT605TA.pdf
(2 pages)
Specifications of FZT605TC
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
1.5A
Voltage - Collector Emitter Breakdown (max)
120V
Vce Saturation (max) @ Ib, Ic
1.5V @ 1mA, 1A
Current - Collector Cutoff (max)
10µA
Dc Current Gain (hfe) (min) @ Ic, Vce
2000 @ 1A, 5V
Power - Max
2W
Frequency - Transition
150MHz
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
ISSUE 4 - MARCH 2001
FEATURES
*
*
PARTMARKING DETAIL -
COMPLEMENTARY TYPES -
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
* Measured under pulsed conditions. Pulse width = 300 s. Duty cycle 2%
Spice parameter data is available upon request for these devices.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward
Current Transfer Ratio
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
Guaranteed h
Fast Switching
FE
Specified up to 2A
FZT605
FZT705
SYMBOL MIN. MAX. UNIT CONDITIONS.
V
V
V
I
I
I
V
V
V
h
f
C
C
t
t
CBO
EBO
CES
t
on
off
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
FE
ibo
obo
amb
TBA
140
120
10
2K
5K
2K
0.5K
150
90 Typical
15 Typical
0.5 Typical
1.6 Typical
= 25°C unless otherwise stated).
0.01
10
0.1
10
1.0,
1.5
1.8
1.7
100K
SYMBOL
V
V
V
I
I
P
T
CM
C
tot
j
CBO
CEO
EBO
:T
stg
V
V
V
V
V
V
V
MHz
pF
pF
nsec
nsec
A
A
A
A
I
I
I
V
V
V
V
I
I
I
I
I
I
I
I
I
f=20MHz
V
VCB=10V, F=1MHz
I
I
C
C
E
C
C
C
C
C
C
C
C
C
C
B1
CB
CB
EB
CES
EB
=100 A
=10mA*
=100 A
=250mA, I
=1A, I
=1A, I
=50mA, V
=500mA, V
=1A, V
=2A, V
=100mA, V
=500mA, V
=1A, V
=I
-55 to +150
=8V
=500mV, f=1MHz
=120V
=120V,
C
=120V
B2
VALUE
140
120
=0.5mA
1.5
10
FZT605
4
2
B
B
CE
CE
CE
=1mA*
=1mA*
=5V*
=5V*
T
=5V*
CE
amb
B
CE
CE
CE
=0.25mA*
=5V
B
=100°C
=5V*
=10V
=10V
UNIT
C
W
°C
V
V
V
A
A
E
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FZT605TC Summary of contents
Page 1
SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 4 - MARCH 2001 FEATURES * Guaranteed h Specified Fast Switching PARTMARKING DETAIL - FZT605 COMPLEMENTARY TYPES - FZT705 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter ...
Page 2
FZT605 TYPICAL CHARACTERISTICS 1.8 -55°C +25°C 1.6 +100°C +175°C 1.4 1 =100 C B 1.0 0.8 0.6 0.4 0.2 0 0.01 0 Collector Current (Amps CE(sat) C 2.2 -55°C +25°C 2.0 ...