FZT1151ATC Diodes Zetex, FZT1151ATC Datasheet

TRANSISTOR PNP HI GAIN SOT223

FZT1151ATC

Manufacturer Part Number
FZT1151ATC
Description
TRANSISTOR PNP HI GAIN SOT223
Manufacturer
Diodes Zetex
Datasheet

Specifications of FZT1151ATC

Transistor Type
PNP
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
300mV @ 250mA, 3A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 500mA, 2V
Power - Max
2.5W
Frequency - Transition
145MHz
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 - JANUARY 1997
FEATURES
*
*
*
*
*
ABSOLUTE MAXIMUM RATINGS.
† The power which can be dissipated assuming the device is mounted in a typical manner on
a P.C.B. with copper equal to 2 inches x 2 inches
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
Operating and Storage Temperature
Range
V
3 Amp Continuous Current
5 Amp Pulse Current
Low saturation Voltage
High Gain
CEO
= -40V
amb
=25°C †
SYMBOL
V
V
V
I
I
I
P
T
CM
C
B
tot
j
CBO
CEO
EBO
:T
stg
-55 to +150
VALUE
-500
-45
-40
2.5
-5
-5
-3
FZT1151A
C C
SOT223
UNIT
B
mA
°C
W
V
V
V
A
A
C
E

Related parts for FZT1151ATC

FZT1151ATC Summary of contents

Page 1

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 - JANUARY 1997 FEATURES * V = -40V CEO * 3 Amp Continuous Current * 5 Amp Pulse Current * Low saturation Voltage * High Gain ABSOLUTE MAXIMUM RATINGS. PARAMETER ...

Page 2

FZT1151A ELECTRICAL CHARACTERISTICS (at T PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current I Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On ...

Page 3

TYPICAL CHARACTERISTICS 1.0 +25°C 0.8 0.6 IC/IB=10 IC/IB=50 IC/IB=100 IC/IB=200 0.4 0 10m 100m I - Collector Current ( CE(sat) C 750 500 250 +100°C +25°C -55° 100m 10m I - Collector ...

Page 4

FZT1151A D= 100µs 1ms 10ms 100ms Pulse Width Transient Thermal Resistance SPICE PARAMETERS *ZETEX FZT1151A Spice model Last revision 12/12/96 * .MODEL FZT1151A PNP IS =1.7e-12 NF =1.004 ...

Related keywords