BC817-25,235 NXP Semiconductors, BC817-25,235 Datasheet - Page 9

• Manufacturer Part Number: BC817-25,235
• Description: TRANSISTOR NPN 500MA 45V SOT23
• Manufacturer: NXP Semiconductors

Specifications of BC817-25,235

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 100mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 933628630235; BC817-25 /T3; BC817-25 /T3

NXP Semiconductors
BC817_BC817W_BC337_6
Product data sheet
Fig 10. Selection -16: Collector current as a function
(10) I
(A)
I
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
(8) I
(9) I
C
1.2
0.8
0.4
0
0
T
of collector-emitter voltage; typical values
B
B
B
B
B
B
B
B
B
B
amb
= 16.0 mA
= 14.4 mA
= 12.8 mA
= 11.2 mA
= 9.6 mA
= 8.0 mA
= 6.4 mA
= 4.8 mA
= 3.2 mA
= 1.6 mA
= 25 °C
1
2
(5)
3
(4)
(3)
4
006aaa140
V
(2)
CE
(10)
(V)
(1)
(6)
(7)
(8)
(9)
Rev. 06 — 17 November 2009
5
Fig 11. Selection -25: Collector current as a function
BC817; BC817W; BC337
(10) I
(A)
I
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
(8) I
(9) I
C
45 V, 500 mA NPN general-purpose transistors
1.2
0.8
0.4
0
0
T
of collector-emitter voltage; typical values
B
B
B
B
B
B
B
B
B
B
amb
= 13.0 mA
= 11.7 mA
= 10.4 mA
= 9.1 mA
= 7.8 mA
= 6.5 mA
= 5.2 mA
= 3.9 mA
= 2.6 mA
= 1.3 mA
= 25 °C
1
2
(6)
(5)
3
(4)
(3)
© NXP B.V. 2009. All rights reserved.
4
006aaa141
V
(2)
CE
(10)
(V)
(1)
(7)
(8)
(9)
5
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