2SB1132T100P Rohm Semiconductor, 2SB1132T100P Datasheet
2SB1132T100P
Specifications of 2SB1132T100P
Related parts for 2SB1132T100P
2SB1132T100P Summary of contents
Page 1
Medium Power Transistor (32V,1A) 2SB1132 / 2SA1515S / 2SB1237 Features 1) Low V CE(sat). = 0.2V(Typ.) V CE(sat) = 500mA / 50mA Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor www.rohm.com ...
Page 2
Parameter Symbol Collector-base voltage V CBO V Collector-emitter voltage CEO Emitter-base voltage V EBO I Collector current C 2SB1132 Collector power P C dissipation 2SA1515S 2SB1237 Junction temperature Tj Storage temperature ...
Page 3
-200 = -100 Ta 100 − - -20 - -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 ...
Page 4
Ta=25 C 100 10 1 0.1 0.001 0.01 0.1 10 100 1000 1 TIME : t (s) Fig.10 Transient thermal resistance (2SB1132) www.rohm.com ○ 2009 ROHM Co., Ltd. All rights reserved. c −5 Ta=25 ...
Page 5
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...