2SB1236ATV2Q Rohm Semiconductor, 2SB1236ATV2Q Datasheet
2SB1236ATV2Q
Manufacturer Part Number
2SB1236ATV2Q
Description
TRANS DVR PNP 160V 1.5A ATV TB
Manufacturer
Rohm Semiconductor
Datasheet
1.2SB1236ATV2P.pdf
(4 pages)
Specifications of 2SB1236ATV2Q
Transistor Type
PNP
Current - Collector (ic) (max)
1.5A
Voltage - Collector Emitter Breakdown (max)
160V
Vce Saturation (max) @ Ib, Ic
2V @ 100mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 100mA, 5V
Power - Max
1W
Frequency - Transition
50MHz
Mounting Type
Through Hole
Package / Case
ATV
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
- 160 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 1.5 A
Maximum Dc Collector Current
- 3 A
Power Dissipation
10 W
Maximum Operating Frequency
50 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
82
Gain Bandwidth Product Ft
50 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Power Transistor (160V, 1.5A)
Features
1) High breakdown voltage.(BV
2) Low collector output capacitance.
3) High transition frequency.(f
4) Complements the 2SD1918 / 2SD1857A.
Absolute maximum ratings (Ta = 25C)
∗
∗
Packaging specifications and h
Electrical characteristics (Ta = 25C)
∗
○
Collector
power
dissipation
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.
c
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
1 Single pulse Pw=100ms
2 Printed circuit board 1.7mm thick, collector plating 1cm
www.rohm.com
Storage temperature
Junction temperature
Basic ordering unit (pieces)
2SB1275 / 2SB1236A
(Typ. 30pF at V
2009 ROHM Co., Ltd. All rights reserved.
Package
2SB1275
2SB1236A
Parameter
Code
Type
Parameter
h
FE
CB
2SB1275
2SB1236A
= 10V)
2SB1275
CPT3
2500
T
TL
P
Symbol
= 50MH
CEO
Tstg
V
V
V
P
Tj
CBO
CEO
EBO
I
Symbol
C
C
V
BV
BV
BV
Cob
I
I
CE(sat)
FE
h
= 160V)
CBO
EBO
f
FE
CBO
CEO
EBO
T
2
or larger.
2SB1236A
Z
2500
)
ATV
TV2
−55 to +150
D
− 160
− 160
Limits
Min.
100
−160
−160
−1.5
− 5
82
150
−5
−3
10
−
−
−
−
−
1
1
Typ.
50
30
−
−
−
−
−
−
−
−
W(Tc
A(Pulse)
Max.
180
200
A(DC)
− 1
− 1
− 2
−
−
−
−
−
Unit
°C
°C
W
V
V
V
=
25°C)
MHz
Unit
∗ 1
∗ 2
μA
μA
pF
V
V
V
V
−
−
1/3
I
I
I
V
V
I
V
V
V
C
C
E
C
CB
EB
CE
CE
CB
/I
= − 50μA
= − 1mA
= − 50μA
B
= − 120V
= − 4V
= − 5V , I
= − 5V , I
= − 10V , I
= − 1A/ − 0.1A
Dimensions (Unit : mm)
2SB1275
2SB1236A
E
C
E
= 0.1A , f = 30MHz
ROHM : CPT3
EIAJ : SC-63
ROHM : ATV
= − 0.1A
= 0A , f = 1MHz
Conditions
0.65Max.
( 1 )
0.8Min.
2.54
( 2 )
6.8
∗
2.54
( 3 )
2.5
0.5
1.5
0.9
9.5
5.5
Taping specifications
1.05
1.5
C0.5
2.5
0.45
2009.12 - Rev.B
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
(1) Emitter
(2) Collector
(3) Base
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2SB1236ATV2Q Summary of contents
Page 1
Power Transistor (160V, 1.5A) 2SB1275 / 2SB1236A Features = 160V) 1) High breakdown voltage.(BV CEO 2) Low collector output capacitance. (Typ. 30pF 10V High transition frequency.(f = 50MH ) Complements the 2SD1918 ...
Page 2
Ta=25°C −0.8 = −10mA −9mA −0.6 −8mA −7mA −0.4 −0.2 0 −1 −2 −3 −4 −5 0 (V) COLLECTOR TO EMITTER VOLTAGE : V CE Fig.1 Ground emitter output characteristics 1000 ...
Page 3
Ic Max. (Pulse ∗ ) Pw=10ms ∗ −2 −1 −0.5 100ms ∗ −0.2 DC −0.1 −0.05 −0.02 −0.01 −0.005 Ta=25°C ∗ Single −0.002 NONREPETITIVE PULSE −0.001 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 ...
Page 4
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...