2SC5881TLR Rohm Semiconductor, 2SC5881TLR Datasheet
2SC5881TLR
Manufacturer Part Number
2SC5881TLR
Description
TRANSISTOR NPN 60V 5A SOT-428 TR
Manufacturer
Rohm Semiconductor
Datasheet
1.2SC5881TLQ.pdf
(3 pages)
Specifications of 2SC5881TLR
Transistor Type
NPN
Current - Collector (ic) (max)
5A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
400mV @ 300mA, 3A
Dc Current Gain (hfe) (min) @ Ic, Vce
180 @ 100mA, 2V
Power - Max
10W
Frequency - Transition
160MHz
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Transistors
Power transistor (60V, 5 A)
2SC5881
! ! ! ! Features
1) High speed switching.
2) Low saturation voltage, typically
3) Strong discharge power for inductive load and
4) Complements the 2SA2096
!Applications
Low frequency amplifier
High speed switching
! ! ! ! Structure
NPN Silicon epitaxial planar transistor
! ! ! ! Packaging specifications
! ! ! ! Absolute maximum ratings (Ta=25°C)
∗1 Pw=10ms, non repetitive pulse
∗2 Ta=25°C
∗3 Tc=25°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Type
2SC5881
(Tf : Typ. : 25ns at I
(Typ. : 200mV at I
capacitance load.
Package
Code
Basic ordering unit (pieces)
Parameter
C
C
= 3.0A, I
= 5A)
DC
Pulsed
B
= 300mA)
Taping
2500
TL
Symbol
V
V
V
V
Tstg
I
P
Tj
CBO
CES
CEO
EBO
I
CP
C
C
−55 to 150
Limits
10.0
10.0
100
100
150
6.5
5.0
1.0
60
! ! ! ! External dimensions (Unit : mm)
(1) Base
(2) Collector
(3) Emitter
CPT3
(SC-63)
<SOT-428>
Unit
°C
°C
W
W
V
V
V
V
A
A
0.8Min.
Symbol :
∗1
∗2
∗3
2.5
C5881
Each lead has same dimensions
0.9
1.5
9.5
5.5
1.5
C0.5
(x1 / 2)
2SC5881
1/3
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2SC5881TLR Summary of contents
Page 1
Transistors Power transistor (60V 2SC5881 ! ! ! ! Features 1) High speed switching. (Tf : Typ. : 25ns 5A Low saturation voltage, typically (Typ. : 200mV 3.0A ...
Page 2
Transistors ! ! ! ! Electrical characteristics (Ta=25°C) Parameter Symbol BV Collector-emitter breakdown voltage BV BV Collector-base breakdown voltage BV Emitter-base breakdown voltage I Collector cut-off current CBO I Emitter cut-off current EBO V Collector-emitter saturation voltage CE (sat) h ...
Page 3
Transistors 10 = Ta=125°C Ta=25°C Ta= −40°C 0.1 0.001 0.01 0 COLLECTOR CURRENT : I (A) C Fig.7 Base-Emitter Saturation Voltage vs. Collecter Current 1000 Ta=25°C f=1MHz 100 10 1 ...