MMBT4401LT3G ON Semiconductor, MMBT4401LT3G Datasheet - Page 6

• Manufacturer Part Number: MMBT4401LT3G
• Description: TRANS NPN GP 40V 600MA SOT-23
• Manufacturer: ON Semiconductor

Specifications of MMBT4401LT3G

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 1V
• Power - Max: 225mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 600mA
• Power Dissipation: 300mW
• Frequency (max): 250MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant

Product Bulletin #16134
BZX84C6V2LT1
BZX84C6V2LT1G
BZX84C6V2LT3G
BZX84C6V8LT1
BZX84C6V8LT1G
BZX84C75LT1G
BZX84C7V5LT1G
BZX84C8V2LT1G
BZX84C9V1LT1G
BZX84C9V1LT3G
MA3075WALT1G
MMBD101LT1G
MMBD2835LT1G
MMBD2836LT1G
MMBD2837LT1G
MMBD2838LT1G
MMBD301LT1
MMBD301LT1G
MMBD352LT1
MMBD352LT1G
MMBD354LT1G
MMBD355LT1G
MMBD6050LT1
MMBD6050LT1G
MMBD6050LT3
MMBD6100LT1
MMBD6100LT1G
MMBD7000LT1
MMBD7000LT1G
MMBD701LT1G
MMBD914LT1
MMBD914LT1G
MMBD914LT1H
MMBD914LT3G
MMBF0201NLT1G
MMBFJ310LT1G
MMBT2222ALT1G
MMBT2222ALT3
MMBT2222ALT3G
MMBT2222LT1G
MMBT2369ALT1G
MMBT2369LT1G
MMBT2484LT1G
MMBT2907ALT1
MMBT2907ALT1G
MMBT2907ALT3G
MMBT3416LT3G
MMBT3904LT1G
MMBT3904LT3G
MMBT3906LT1G
MMBT4401LT1
MMBT4401LT1G
MMBT4401LT1H
MMBT4401LT3G
MMBT4403LT1G
MMBT4403LT1H
Issue Date: 11 Jul 2008
Rev.07-02-06
Page 6 of 14