BC548BRL1G ON Semiconductor, BC548BRL1G Datasheet - Page 2

TRANS NPN GP 30V 100MA TO-92

BC548BRL1G

Manufacturer Part Number
BC548BRL1G
Description
TRANS NPN GP 30V 100MA TO-92
Manufacturer
ON Semiconductor
Datasheet

Specifications of BC548BRL1G

Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
250mV @ 500µA, 10mA
Current - Collector Cutoff (max)
15nA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
625mW
Frequency - Transition
300MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
30V
Collector-base Voltage
30V
Emitter-base Voltage
6V
Collector Current (dc) (max)
100mA
Dc Current Gain (min)
200
Power Dissipation
625mW
Frequency (max)
300MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-92
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
1. I
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector − Emitter Breakdown Voltage
Collector − Base Breakdown Voltage
Emitter − Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector − Emitter Saturation Voltage
Base − Emitter Saturation Voltage
Base − Emitter On Voltage
Current − Gain − Bandwidth Product
Output Capacitance
Input Capacitance
Small − Signal Current Gain
Noise Figure (I
B
is value for which I
(I
(I
(I
(V
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
(V
(I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
CE
CE
CE
CE
CB
EB
= 10 mA, I
= 1.0 mA, I
= 100 mAdc)
= 10 mA, V
= 2.0 mA, V
= 100 mA, V
= 10 mA, I
= 100 mA, I
= 10 mA, I
= 10 mA, I
= 2.0 mA, V
= 10 mA, V
= 10 mA, V
= 2.0 mA, V
= 0.5 V, I
= 70 V, V
= 50 V, V
= 35 V, V
= 30 V, T
= 10 V, I
C
= 0.2 mA, V
C
B
B
B
C
CE
B
A
C
BE
BE
BE
CE
CE
= 0)
B
CE
CE
CE
= 0.5 mA)
= See Note 1)
= 0.5 mA)
= 0, f = 1.0 MHz)
CE
= 0)
= 125°C)
= 0, f = 1.0 MHz)
= 5.0 mA)
= 5.0 V)
= 0)
= 0)
= 0)
= 5.0 V)
= 5.0 V, f = 100 MHz)
C
= 5.0 V)
= 5.0 V)
= 5.0 V, f = 1.0 kHz)
= 5.0 V)
= 11 mA at V
CE
Characteristic
= 5.0 V, R
CE
= 1.0 V.
BC546B, BC547A, B, C, BC548B, C
(T
S
A
= 2 kW, f = 1.0 kHz, Df = 200 Hz)
= 25°C unless otherwise noted)
http://onsemi.com
BC546B/547B/548B
BC546B/547B/548B
BC546B/547B/548B
BC546B/547B/548B
BC547C/BC548C
BC546/547/548
BC547C/548C
BC547A/548A
BC547/548
2
BC548C
BC548C
BC547A
BC547A
BC547A
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC546
BC547
BC548
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
I
BE(sat)
C
BE(on)
C
h
CES
h
NF
f
obo
FE
ibo
T
fe
0.55
Min
200
420
150
150
150
125
125
125
240
450
110
110
110
110
6.0
6.0
6.0
65
45
30
80
50
30
0.09
Typ
150
270
180
290
520
120
180
300
300
300
300
220
330
600
0.2
0.2
0.2
0.2
0.3
0.7
1.7
2.0
2.0
2.0
90
10
Max
0.25
0.77
450
800
800
220
450
800
500
900
260
500
900
4.0
0.6
0.6
0.7
4.5
15
15
15
10
10
10
MHz
Unit
nA
mA
pF
pF
dB
V
V
V
V
V
V

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