BC548BRL1G ON Semiconductor, BC548BRL1G Datasheet - Page 2
BC548BRL1G
Manufacturer Part Number
BC548BRL1G
Description
TRANS NPN GP 30V 100MA TO-92
Manufacturer
ON Semiconductor
Datasheet
1.BC547CG.pdf
(6 pages)
Specifications of BC548BRL1G
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
250mV @ 500µA, 10mA
Current - Collector Cutoff (max)
15nA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
625mW
Frequency - Transition
300MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
30V
Collector-base Voltage
30V
Emitter-base Voltage
6V
Collector Current (dc) (max)
100mA
Dc Current Gain (min)
200
Power Dissipation
625mW
Frequency (max)
300MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-92
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
1. I
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector − Emitter Breakdown Voltage
Collector − Base Breakdown Voltage
Emitter − Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector − Emitter Saturation Voltage
Base − Emitter Saturation Voltage
Base − Emitter On Voltage
Current − Gain − Bandwidth Product
Output Capacitance
Input Capacitance
Small − Signal Current Gain
Noise Figure (I
B
is value for which I
(I
(I
(I
(V
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
(V
(I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
CE
CE
CE
CE
CB
EB
= 10 mA, I
= 1.0 mA, I
= 100 mAdc)
= 10 mA, V
= 2.0 mA, V
= 100 mA, V
= 10 mA, I
= 100 mA, I
= 10 mA, I
= 10 mA, I
= 2.0 mA, V
= 10 mA, V
= 10 mA, V
= 2.0 mA, V
= 0.5 V, I
= 70 V, V
= 50 V, V
= 35 V, V
= 30 V, T
= 10 V, I
C
= 0.2 mA, V
C
B
B
B
C
CE
B
A
C
BE
BE
BE
CE
CE
= 0)
B
CE
CE
CE
= 0.5 mA)
= See Note 1)
= 0.5 mA)
= 0, f = 1.0 MHz)
CE
= 0)
= 125°C)
= 0, f = 1.0 MHz)
= 5.0 mA)
= 5.0 V)
= 0)
= 0)
= 0)
= 5.0 V)
= 5.0 V, f = 100 MHz)
C
= 5.0 V)
= 5.0 V)
= 5.0 V, f = 1.0 kHz)
= 5.0 V)
= 11 mA at V
CE
Characteristic
= 5.0 V, R
CE
= 1.0 V.
BC546B, BC547A, B, C, BC548B, C
(T
S
A
= 2 kW, f = 1.0 kHz, Df = 200 Hz)
= 25°C unless otherwise noted)
http://onsemi.com
BC546B/547B/548B
BC546B/547B/548B
BC546B/547B/548B
BC546B/547B/548B
BC547C/BC548C
BC546/547/548
BC547C/548C
BC547A/548A
BC547/548
2
BC548C
BC548C
BC547A
BC547A
BC547A
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC546
BC547
BC548
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
I
BE(sat)
C
BE(on)
C
h
CES
h
NF
f
obo
FE
ibo
T
fe
0.55
Min
200
420
150
150
150
125
125
125
240
450
110
110
110
110
6.0
6.0
6.0
65
45
30
80
50
30
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.09
Typ
150
270
180
290
520
120
180
300
300
300
300
220
330
600
0.2
0.2
0.2
0.2
0.3
0.7
1.7
2.0
2.0
2.0
90
10
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.25
0.77
450
800
800
220
450
800
500
900
260
500
900
4.0
0.6
0.6
0.7
4.5
15
15
15
10
10
10
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
MHz
Unit
nA
mA
pF
pF
dB
V
V
V
V
V
V
−
−