MMBTA56LT1G ON Semiconductor, MMBTA56LT1G Datasheet - Page 7

• Manufacturer Part Number: MMBTA56LT1G
• Description: TRANS DRIVER SS PNP 80V SOT23
• Manufacturer: ON Semiconductor
• Type: Driverr

Specifications of MMBTA56LT1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 225mW
• Frequency - Transition: 50MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Collector-base Voltage(max): 80V
• Emitter-base Voltage (max): 4V
• Collector Current (dc) (max): 500mA
• Dc Current Gain (min): 100
• Power Dissipation: 300mW
• Frequency (max): 50MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Configuration: Single
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 4 V
• Continuous Collector Current: - 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Maximum Operating Frequency: 50 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100 at 10 mA at 1 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: -500 mA
• Current, Gain: 100
• Frequency: 50 MHz
• Polarity: PNP
• Primary Type: Si
• Voltage, Breakdown, Collector To Emitter: -80 V
• Voltage, Collector To Base: -80 V
• Voltage, Collector To Emitter: -80 V
• Voltage, Collector To Emitter, Saturation: -0.25 V
• Voltage, Emitter To Base: -4 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMBTA56LT1GOS; MMBTA56LT1GOS; MMBTA56LT1GOSTR

Product Bulletin #16134
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Issue Date: 11 Jul 2008
Rev.07-02-06
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