MMBT5087LT1G ON Semiconductor, MMBT5087LT1G Datasheet

TRANS GP SS PNP LN 50V SOT23

MMBT5087LT1G

Manufacturer Part Number
MMBT5087LT1G
Description
TRANS GP SS PNP LN 50V SOT23
Manufacturer
ON Semiconductor
Type
Low Noiser
Datasheets

Specifications of MMBT5087LT1G

Transistor Type
PNP
Current - Collector (ic) (max)
50mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
300mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 100µA, 5V
Power - Max
225mW
Frequency - Transition
40MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
3 V
Continuous Collector Current
- 0.05 A
Maximum Dc Collector Current
0.05 A
Power Dissipation
225 mW
Maximum Operating Frequency
40 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
250 at 0.1 mA at 5 V
Minimum Operating Temperature
- 55 C
Current, Collector
-50 mA
Current, Gain
250
Frequency
40 MHz
Package Type
SOT-23
Polarity
PNP
Primary Type
Si
Voltage, Breakdown, Collector To Emitter
-50 V
Voltage, Collector To Base
-50 V
Voltage, Collector To Emitter
-50 V
Voltage, Collector To Emitter, Saturation
-0.3 V
Voltage, Emitter To Base
-3 V
Number Of Elements
1
Collector-emitter Voltage
50V
Collector-base Voltage
50V
Emitter-base Voltage
3V
Collector Current (dc) (max)
50mA
Dc Current Gain (min)
250
Frequency (max)
40MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBT5087LT1GOS
MMBT5087LT1GOS
MMBT5087LT1GOSTR

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Manufacturer
Quantity
Price
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Manufacturer:
ON
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Manufacturer:
ON Semiconductor
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MMBT5087LT1G
Low Noise Transistor
PNP Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 4
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Total Device Dissipation FR−5 Board,
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(Note 1) T
Derate above 25°C
Substrate, (Note 2) T
Derate above 25°C
Characteristic
A
= 25°C
Rating
A
= 25°C
Symbol
Symbol
T
V
V
V
R
R
J
P
P
CEO
CBO
EBO
, T
I
qJA
qJA
C
D
D
stg
−55 to +150
Value
−3.0
Max
−50
−50
−50
225
556
300
417
1.8
2.4
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
°C
†For information on tape and reel specifications,
MMBT5087LT1G
MMBT5087LT3G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
Device
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
1
ORDERING INFORMATION
2
2Q = Device Code
M
G
MARKING DIAGRAM
BASE
http://onsemi.com
1
3
1
= Date Code*
= Pb−Free Package
(Pb−Free)
(Pb−Free)
Package
SOT−23
SOT−23
COLLECTOR
2Q M G
EMITTER
Publication Order Number:
SOT−23 (TO−236)
G
3
2
CASE 318
STYLE 6
3,000 / Tape & Reel
10,000/Tape & Reel
MMBT5087LT1/D
Shipping

Related parts for MMBT5087LT1G

MMBT5087LT1G Summary of contents

Page 1

... D 300 mW 2.4 mW/°C R 417 °C/W qJA −55 to +150 °C J stg MMBT5087LT1G MMBT5087LT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER 3 SOT−23 (TO−236) ...

Page 2

ELECTRICAL CHARACTERISTICS (T Characteristic OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (I = −1.0 mAdc Collector−Base Breakdown Voltage (I = −100 mAdc Collector Cutoff Current (V = −10 Vdc ...

Page 3

M 500 k 200 k 100 0 5.0 k 1.0 dB 2.0 k 1.0 k 500 200 100 100 I , COLLECTOR CURRENT (mA) C Figure ...

Page 4

TYPICAL STATIC CHARACTERISTICS 1 0.6 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2 BASE CURRENT (mA) B Figure 6. Collector Saturation Region 1.4 ...

Page 5

TYPICAL DYNAMIC CHARACTERISTICS 500 300 200 100 0 BE(off) 10 7.0 5.0 1.0 2.0 3.0 5.0 7 COLLECTOR CURRENT (mA) C Figure 10. Turn−On Time 500 ...

Page 6

... Using Figure pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore For more information, see ON Semiconductor Application Note AN569/D, available from the Literature Distribution Center or on our website at www.onsemi.com. http://onsemi.com 6 FIGURE 16 DUTY CYCLE ...

Page 7

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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