MMBT2131T1G ON Semiconductor, MMBT2131T1G Datasheet
MMBT2131T1G
Manufacturer Part Number
MMBT2131T1G
Description
TRANSISTOR BIPOLAR PNP 40V SC746
Manufacturer
ON Semiconductor
Datasheet
1.MMBT2131T1G.pdf
(4 pages)
Specifications of MMBT2131T1G
Transistor Type
PNP
Current - Collector (ic) (max)
700mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
400mV @ 70mA, 700mA
Dc Current Gain (hfe) (min) @ Ic, Vce
150 @ 100mA, 3V
Power - Max
342mW
Mounting Type
Surface Mount
Package / Case
SC-74-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT2131T1G
Manufacturer:
ON
Quantity:
30 000
MMBT2131T1
General Purpose
Transistors
PNP Bipolar Junction Transistor
(Complementary NPN Device: MMBT2132T1/T3)
NOTE: Voltage and Current are negative for the PNP Transistor.
Features
•
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Minimum FR−4 or G−10 PCB, Operating to Steady State.
2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 4
MAXIMUM RATINGS
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Power Dissipation @ T
Total Power Dissipation @ T
Thermal Resistance, Junction−to−Ambient
(Note 1)
Total Power Dissipation @ T
Total Power Dissipation @ T
Thermal Resistance, Junction−to−Ambient
(Note 2)
Operating and Storage Temperature Range
Pb−Free Package is Available
sided), Operating to Steady State.
Rating
(T
C
C
C
C
C
= 25°C unless otherwise noted)
= 25°C
= 85°C
= 25°C
= 85°C
Symbol
T
V
V
V
R
R
J
P
P
P
P
, T
CEO
CBO
EBO
I
I
qJA
qJA
C
B
D
D
D
D
stg
−55 to +150
Value
700
350
342
178
366
665
346
188
5.0
30
40
1
°C/W
°C/W
Unit
mW
mW
mW
mW
mA
mA
°C
V
V
V
MMBT2131T1
MMBT2131T1G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device
*Date Code orientation may vary depending
(Note: Microdot may be in either location)
upon manufacturing location.
30 VOLTS − V
ORDERING INFORMATION
6
BASE
PIN 6
5
DB = Device Code
M
G
MARKING DIAGRAM
0.7 AMPERES
http://onsemi.com
4
1 2
= Date Code*
= Pb−Free Package
(Pb−Free)
Package
342 mW
3
SC−74
SC−74
DB M G
Publication Order Number:
G
COLLECTOR
PINS 2, 5
EMITTER
CASE 318F
(BR)CEO
PIN 3
STYLE 2
3000/Tape & Reel
3000/Tape & Reel
SC−74
MMBT2131T1/D
Shipping
†
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MMBT2131T1G Summary of contents
Page 1
... D °C/W R 188 qJA ° −55 to +150 J stg MMBT2131T1 MMBT2131T1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com 0.7 AMPERES 30 VOLTS − V (BR)CEO 342 mW COLLECTOR PINS 2, 5 ...
Page 2
ELECTRICAL CHARACTERISTICS (T Characteristic OFF CHARACTERISTICS Collector −Base Breakdown Voltage Collector −Emitter Breakdown Voltage Emitter−Base Breakdown Voltage Collector Cutoff Current (V CB Emitter Cutoff Current ON CHARACTERISTICS DC Current Gain Collector −Emitter Saturation Voltage Collector −Emitter Saturation Voltage Base−Emitter Saturation ...
Page 3
V BE(sat) 0.1 V CE(sat) 0.01 0.001 0.01 0 COLLECTOR CURRENT (A) C Figure 5. “ON” Voltages 0 85° 100 C B 0.5 0.4 0.3 0.2 0 COLLECTOR ...
Page 4
... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...