MJD127T4G ON Semiconductor, MJD127T4G Datasheet

MJD127T4G

Manufacturer Part Number

MJD127T4G

Description

TRANS DARL PNP 8A 100V DPAK

Manufacturer

ON Semiconductor

Datasheet

1.MJD122T4G.pdf (7 pages)

Specifications of MJD127T4G

Transistor Type

PNP - Darlington

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

100V

Vce Saturation (max) @ Ib, Ic

4V @ 80mA, 8A

Current - Collector Cutoff (max)

10µA

Dc Current Gain (hfe) (min) @ Ic, Vce

1000 @ 4A, 4V

Power - Max

1.75W

Frequency - Transition

4MHz

Mounting Type

Surface Mount

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Configuration

Single

Transistor Polarity

PNP

Mounting Style

SMD/SMT

Collector- Emitter Voltage Vceo Max

100 V

Emitter- Base Voltage Vebo

5 V

Collector- Base Voltage Vcbo

100 V

Maximum Dc Collector Current

8 A

Maximum Collector Cut-off Current

10 uA

Power Dissipation

20 W

Maximum Operating Temperature

+ 150 C

Continuous Collector Current

8 A

Dc Collector/base Gain Hfe Min

100, 1000

Minimum Operating Temperature

- 65 C

Polarity

PNP

Number Of Elements

Collector-emitter Voltage

100V

Collector-base Voltage

100V

Emitter-base Voltage

Base-emitter Saturation Voltage (max)

4.5@80mA@8AV

Collector-emitter Saturation Voltage

2@16mA@4A/4@80mA@8AV

Collector Current (dc) (max)

Dc Current Gain

100@8A@4V/1000@4A@4V

Operating Temp Range

-65C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

2 +Tab

Package Type

DPAK

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

MJD127T4GOS
MJD127T4GOS
MJD127T4GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

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Part Number:

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Manufacturer:

ON Semiconductor

Quantity:

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Part Number:

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Manufacturer:

Quantity:

12 500

Company:

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Manufacturer:

Company:

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Part Number:

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Manufacturer:

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Quantity:

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Company:

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Current page: 1 of 7
Download datasheet (131Kb)

MJD122 (NPN)

MJD127 (PNP)

Complementary Darlington

Power Transistor

DPAK For Surface Mount Applications

applications.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. These ratings are applicable when surface mounted on the minimum pad

March, 2011 − Rev. 10

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current

Base Current

Total Power Dissipation @ T

Total Power Dissipation (Note 1)

Operating and Storage Junction

Thermal Resistance

Designed for general purpose amplifier and low speed switching

Lead Formed for Surface Mount Applications in Plastic Sleeves

Surface Mount Replacements for 2N6040−2N6045 Series,

TIP120−TIP122 Series, and TIP125−TIP127 Series

Monolithic Construction With Built−in Base−Emitter Shunt Resistors

High DC Current Gain: h

Epoxy Meets UL 94 V−0 @ 0.125 in

ESD Ratings: Human Body Model, 3B u 8000 V

Pb−Free Packages are Available

sizes recommended.

Derate above 25°C

@ T

Derate above 25°C

Temperature Range

Junction−to−Case

Junction−to−Ambient (Note1)

= 25°C

Characteristic

Rating

Machine Model, C u 400 V

− Continuous

− Peak

= 25°C

= 2500 (Typ) @ I

Symbol

CEO

, T

qJC

qJA

stg

−65 to +150

= 4.0 Adc

Value

0.014

0.16

1.75

Max

6.25

71.4

100

120

mAdc

W/°C

°C/W

Unit

Vdc

Adc

°C

†For information on tape and reel specifications,

MJD122

MJD122G

MJD122T4

MJD122T4G

MJD127

MJD127G

MJD127T4

MJD127T4G

1 2

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Device

100 VOLTS, 20 WATTS

POWER TRANSISTOR

ORDERING INFORMATION

BASE

http://onsemi.com

8 AMPERES

CASE 369C

(Pb−Free)

= Assembly Location

= Year

= Work Week

= 2 or 7

= Pb−Free Package

(Pb−Free)

COLLECTOR 2,4

Package

STYLE 1

SILICON

DPAK

EMITTER 3

Publication Order Number:

2500/Tape & Reel

75 Units/Rail

Shipping

MARKING

DIAGRAM

AYWW

J12xG

MJD122/D

†

Related parts for MJD127T4G

MJD127T4G Summary of contents

Page 1

... MJD127 R 71.4 °C/W MJD127G qJA MJD127T4 MJD127T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage ( mAdc Collector Cutoff Current ( Vdc Collector Cutoff Current (V = 100 Vdc ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS PNP MJD127 20,000 10,000 7000 5000 T = 150°C J 3000 2000 25°C 1000 700 - 55°C 500 300 200 0.1 0.2 0.3 0.5 0 COLLECTOR CURRENT (AMP 2 ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS PNP MJD127 + 5 ≤ FE 25°C to 150° for V VC CE(sat 55°C to 25°C 25°C ...

Page 5

R & R VARIED TO OBTAIN DESIRED CURRENT LEVELS MUST BE FAST RECOVERY TYPE, e.g.: 1 ≈ 100 mA 1N5825 USED ABOVE I B ≈ 100 mA MSD6100 USED BELOW ...

Page 6

COLLECTOR PNP BASE ≈ ≈ 120 EMITTER Figure 13. Darlington Schematic http://onsemi.com COLLECTOR NPN BASE ≈ ≈ 120 EMITTER 6 ...

Page 7

... M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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