BD441G ON Semiconductor, BD441G Datasheet - Page 3

• Manufacturer Part Number: BD441G
• Description: TRANS NPN 80V 4A BIPO TO-225AA
• Manufacturer: ON Semiconductor

Specifications of BD441G

• Transistor Type: NPN
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 800mV @ 300mA, 3A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 500mA, 1V
• Power - Max: 36W
• Frequency - Transition: 3MHz
• Mounting Type: Through Hole
• Package / Case: TO-225-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

2.0
1.6
1.2
0.8
0.6
200
180
160
140
120
100
0.005
2.0
1.6
1.2
0.8
0.4
80
60
40
20
0
0
0
0.05
0.01
0.01
0.07
T
J
I
V
0.02 0.030.05
C
= 25°C
BE(sat)
0.1
= 10 A
I
C
0.02
, COLLECTOR CURRENT (AMP)
Figure 3. “On” Voltage
@ I
0.2 0.3
V
C
T
/I
0.03
CE(sat)
J
B
= 25°C
= 10
0.1
@ I
0.05
C
0.2
0.5 0.7
/I
B
0.3 0.5 1.0 2.0 3.0 4.0
= 10
V
100 mA
BE
Figure 1. Collector Saturation Region
BD435, BD437, BD439, BD441
@ V
1.0
0.1
I
C
CE
, COLLECTOR CURRENT (AMP)
= 2.0 V
Figure 2. Current Gain
I
B
2.0
, BASE CURRENT (mA)
BD439, 441
http://onsemi.com
0.2
3.0
3
0.3
5.0
7.0
4.0
1.0
0.5
0.1
10
0.5
1.0
10
Figure 4. Active Region Safe Operating Area
CURVES APPLY BELOW RATED V
BD433, 435, 437
V
CE
T
1.0 A
2.0
J
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
= 150°C
20
SECONDARY BREAKDOWN
THERMAL LIMIT T
BONDING WIRE LIMIT
1
30
5.0
50
2
70
10
C
= 25°C
3.0 A
100
BD437
BD439
BD441
dc
3
20
5 ms
CEO
200
5
300
50
500
100