BD242BG ON Semiconductor, BD242BG Datasheet - Page 5

• Manufacturer Part Number: BD242BG
• Description: TRANS PNP 80V 3A BIPO TO220AB
• Manufacturer: ON Semiconductor

Specifications of BD242BG

• Transistor Type: PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 1.2V @ 600mA, 3A
• Current - Collector Cutoff (max): 300µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 1A, 4V
• Power - Max: 40W
• Frequency - Transition: 3MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10
10
10
10
10
10
10
-1
- 2
- 3
3
2
1
0
- 0.4
- 0.3 - 0.2 - 0.1
V
T
CE
J
= 150°C
REVERSE
Figure 12. Collector Cut-Off Region
= 30 V
100°C
25°C
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
0
BD241C (NPN), BD242B (PNP), BD242C (PNP)
+ 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6
I
CES
FORWARD
http://onsemi.com
5
10
10
10
10
10
10
7
6
5
4
3
2
20
Figure 13. Effects of Base-Emitter Resistance
I
C
≈ I
40
CES
OBTAINED FROM FIGURE 12)
(TYPICAL I
T
J
I
, JUNCTION TEMPERATURE (°C)
60
C
= 2 x I
CES
CES
VALUES
80
I
C
= 10 x I
100
CES
120
V
CE
140
= 30 V
160