MJD45H11G ON Semiconductor, MJD45H11G Datasheet
MJD45H11G
Manufacturer Part Number
MJD45H11G
Description
TRANS POWER PNP 8A 80V DPAK
Manufacturer
ON Semiconductor
Type
Powerr
Specifications of MJD45H11G
Transistor Type
PNP
Current - Collector (ic) (max)
8A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
1V @ 400mA, 8A
Current - Collector Cutoff (max)
1µA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 4A, 1V
Power - Max
1.75W
Frequency - Transition
90MHz
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
PNP
Number Of Elements
1
Collector-emitter Voltage
80V
Emitter-base Voltage
5V
Collector Current (dc) (max)
8A
Dc Current Gain (min)
60
Power Dissipation
1.75W
Frequency (max)
90MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Configuration
Single
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
8 A
Maximum Dc Collector Current
8 A
Maximum Operating Frequency
90 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
60 at 2 A at 1 V
Minimum Operating Temperature
- 55 C
Current, Collector
8 A
Current, Gain
40
Frequency
90 MHz
Polarity
PNP
Primary Type
Si
Resistance, Thermal, Junction To Case
6.25 °C/W
Voltage, Breakdown, Collector To Emitter
80 V
Voltage, Collector To Emitter
80 V
Voltage, Collector To Emitter, Saturation
1 V
Voltage, Emitter To Base
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MJD45H11G
MJD45H11GOS
MJD45H11GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MJD45H11G
Manufacturer:
ON
Quantity:
2 300
Company:
Part Number:
MJD45H11G
Manufacturer:
ON
Quantity:
12 500
Company:
Part Number:
MJD45H11G
Manufacturer:
ON
Quantity:
12 500
Part Number:
MJD45H11G
Manufacturer:
ON/安森美
Quantity:
20 000
MJD44H11 (NPN)
MJD45H11 (PNP)
Complementary Power
Transistors
DPAK For Surface Mount Applications
driver stages in applications such as switching regulators, converters,
and power amplifiers.
Features
•
•
•
•
•
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. These ratings are applicable when surface mounted on the minimum pad
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Total Power Dissipation (Note 1)
Operating and Storage Junction
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note 1)
Lead Temperature for Soldering
Designed for general purpose power and switching such as output or
(No Suffix)
Lead Formed for Surface Mount Application in Plastic Sleeves
Straight Lead Version in Plastic Sleeves (“-1” Suffix)
Electrically Similar to Popular D44H/D45H Series
Low Collector Emitter Saturation Voltage -
Fast Switching Speeds
Complementary Pairs Simplifies Designs
Epoxy Meets UL 94 V-0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Pb-Free Packages are Available
sizes recommended.
@ T
Derate above 25°C
@ T
Derate above 25°C
Temperature Range
A
C
= 25°C
= 25°C
V
CE(sat)
Characteristic
Rating
Machine Model, C u 400 V
- Continuous
- Peak
= 1.0 Volt Max @ 8.0 Amperes
Preferred Device
Symbol
Symbol
T
V
R
R
J
V
P
P
, T
CEO
T
I
qJC
qJA
EB
C
D
D
L
stg
-55 to +150
0.014
Max
0.16
1.75
Max
6.25
71.4
260
80
16
20
5
8
1
W/°C
W/°C
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Adc
°C
°C
W
W
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1 2
1
2
POWER TRANSISTORS
3
80 VOLTS, 20 WATTS
3
ORDERING INFORMATION
Y
WW
J4xH11
G
4
4
8 AMPERES
CASE 369C
CASE 369D
SILICON
STYLE 1
STYLE 1
DPAK-3
= Year
= Work Week
= Device Code
= Pb-Free Package
DPAK
x = 4 or 5
DIAGRAMS
MARKING
xH11G
xH11G
YWW
YWW
J4
J4
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MJD45H11G Summary of contents
Page 1
MJD44H11 (NPN) MJD45H11 (PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage ( mA Collector Cutoff Current (V = Rated CEO BE Emitter Cutoff Current ( Vdc ...
Page 3
... MJD44H11-001 MJD44H11-001G MJD44H11RL MJD44H11RLG MJD44H11T4 MJD44H11T4G MJD44H11T5 MJD44H11T5G MJD45H11 MJD45H11G MJD45H11-001 MJD45H11-001G MJD45H11RL MJD45H11RLG MJD45H11T4 MJD45H11T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MJD44H11 (NPN) MJD45H11 (PNP) ...
Page 4
... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O SEATING -T- PLANE SOLDERING FOOTPRINT* 6.20 3.0 0.244 0.118 2.58 0.101 6.172 1 ...
Page 5
MJD44H11 (NPN) MJD45H11 (PNP -T- SEATING K PLANE 0.13 (0.005) M PACKAGE DIMENSIONS DPAK-3 CASE 369D-01 ISSUE NOTES: ...