TIP141G ON Semiconductor, TIP141G Datasheet - Page 6

• Manufacturer Part Number: TIP141G
• Description: TRANS DARL NPN 10A 80V TO-218
• Manufacturer: ON Semiconductor

Specifications of TIP141G

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 10A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 3V @ 40mA, 10A
• Current - Collector Cutoff (max): 2mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 5A, 4V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: SOT-93, TO-218 (Straight Leads)
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 10 A
• Maximum Collector Cut-off Current: 1000 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 1000
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
5.0
4.0
3.0
2.0
1.0
100
7.0
5.0
2.0
1.0
70
50
20
10
0
Figure 10. Free−Air Temperature Power Derating
0
1.0
Figure 9. Magnitude of Common Emitter
Small−Signal Short−Circuit Forward
40
PNP
T
NPN
A
, FREE−AIR TEMPERATURE (°C)
http://onsemi.com
Current Transfer Ratio
2.0
f, FREQUENCY (MHz)
80
6
3.0
120
PNP
NPN
5.0
160
V
I
T
C
J
CE
= 1.0 A
7.0
= 25°C
= 10 V
200
10