TIP142G ON Semiconductor, TIP142G Datasheet - Page 5

• Manufacturer Part Number: TIP142G
• Description: TRANS DARL NPN 10A 100V TO218AC
• Manufacturer: ON Semiconductor
• Type: Power, Switchr

Specifications of TIP142G

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 10A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 3V @ 40mA, 10A
• Current - Collector Cutoff (max): 2mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 5A, 4V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: SOT-93, TO-218 (Straight Leads)
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 100 V
• Maximum Dc Collector Current: 10 A
• Maximum Collector Cut-off Current: 1000 uA
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 10 A
• Dc Collector/base Gain Hfe Min: 1000
• Minimum Operating Temperature: - 65 C
• Current, Gain: 500
• Current, Input: 0.5 A
• Current, Output: 10 A
• Package Type: SOT-93 (TO-218)
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Ambient: 35.7
• Voltage, Collector To Emitter, Saturation: 3 V
• Voltage, Input: 5 V
• Voltage, Output: 100 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: TIP142GOS

NOTE 1: Input pulse width is increased until I
NOTE 2: For NPN test circuit reverse polarities.
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
INPUT
There are two limitations on the power handling ability of
7.0
5.0
3.0
2.0
1.0
0.2
20
10
10
Figure 6. Active−Region Safe Operating Area
T
J
= 150°C
50
MPS−U52
V
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITATION @ T
15
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
50
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
20
R
= 100
TEST CIRCUIT
BB2
R
1.5 k
BB1
30
TIP140, 145
TIP141, 146
TIP142, 147
dc
V
BB1
C
V
BB2
ACTIVE−REGION SAFE OPERATING AREA
= 25°C
= 10 V
= 0
CM
50
= 1.42 A.
70
Figure 8. Inductive Load
V
TUT
CE
C
http://onsemi.com
MONITOR
− V
100 mH
R
V
S
CE
100
CC
= 0.1
= 20 V
MONITOR
5
I
C
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
The data of Figure 6 is based on T
7.0
5.0
2.0
1.0
15
10
VOLTAGE AND CURRENT WAVEFORMS
Figure 7. Unclamped Inductive Load
COLLECTOR
COLLECTOR
CURRENT
VOLTAGE
VOLTAGE
L, UNCLAMPED INDUCTIVE LOAD (mH)
0.5
V
V
(BR)CER
INPUT
1.42 A
CE(sat)
−20 V
1.0
2.0
100 ms
w ≈ 7.0 ms (SEE NOTE 1)
5.0
J(pk)
10
100 mJ
= 150_C; T
20
5.0 V
0
0
50
C
100
is