MPS6602 ON Semiconductor, MPS6602 Datasheet - Page 6

• Manufacturer Part Number: MPS6602
• Description: TRANS NPN SS GP 40V TO92
• Manufacturer: ON Semiconductor

Specifications of MPS6602

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 500mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 100MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MPS6602OS

−0.8
−1.2
−1.6
−2.0
−2.4
−2.8
500
200
100
1.0
0.8
0.6
0.4
0.2
1 k
50
20
10
0
1.0
1.0
0.01
T
Figure 19. MPS6601/6602 Saturation Region
C
10 mA
= 25°C
I
C
Figure 15. Base−Emitter Temperature
2.0
=
Figure 17. Safe Operating Area
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
V
0.1
CE
10
I
R
, COLLECTOR−EMITTER VOLTAGE
C
qVB
, COLLECTOR CURRENT (mA)
50 mA
I
I
MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP)
C
B
5.0
, BASE CURRENT (mA)
for V
=
Coefficient
BE
NPN
100 mA
100
MPS6601
MPS6602
1.0
10
I
C
=
1.0 s
20
1.0 MS
1000
500 mA
10
I
C
40
=
T
250 mA
1000 mA
J
http://onsemi.com
I
= 25°C
I
C
C
=
=
100
6
−500
−200
−100
−0.8
−1.2
−1.6
−2.0
−2.4
−2.8
−1 k
−1.0
−0.8
−0.6
−0.4
−0.2
−50
−20
−10
0
−0.01
−1.0
−1.0
Figure 20. MPS6651/6652 Saturation Region
T
C
= 25°C
−10 mA
Figure 16. Base−Emitter Temperature
−2.0
R
I
C
qVB
=
Figure 18. Safe Operating Area
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
V
−0.1
for V
−10
CE
I
, COLLECTOR−EMITTER VOLTAGE
−50 mA
C
BE
, COLLECTOR CURRENT (mA)
I
C
−5.0
I
B
=
, BASE CURRENT (mA)
Coefficient
PNP
−100
−1.0
−10
MPS6651
MPS6652
−100 mA
I
C
1.0 s
=
−20
1.0 MS
−1000
−10
−500 mA
−40
I
C
=
T
−250 mA
−1000 mA
J
I
= 25°C
C
I
C
=
=
−100