MPSW45 ON Semiconductor, MPSW45 Datasheet

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MPSW45

Manufacturer Part Number
MPSW45
Description
TRANS NPN DARL SS 1W 40V TO92
Manufacturer
ON Semiconductor
Datasheet

Specifications of MPSW45

Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1.5V @ 2mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
25000 @ 200mA, 5V
Power - Max
1W
Frequency - Transition
100MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Long Body), TO-226
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Other names
MPSW45OS

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MPSW45, MPSW45A
One Watt Darlington
Transistors
NPN Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2010
August, 2010 − Rev. 4
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T
Derate above 25°C
Total Device Dissipation @ T
Derate above 25°C
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Pb−Free Packages are Available*
Characteristic
Rating
A
C
MPSW45
MPSW45A
MPSW45
MPSW45A
= 25°C
= 25°C
Symbol
Symbol
T
V
V
V
R
R
J
P
P
CBO
EBO
, T
CES
I
qJA
qJC
C
D
D
stg
−55 to +150
Value
Max
125
1.0
1.0
8.0
2.5
40
50
50
60
12
20
50
1
mW/°C
mW/°C
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
°C
W
W
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
STRAIGHT LEAD
1 2
BULK PACK
(Note: Microdot may be in either location)
3
MPSW45x = Device Code
A
Y
WW
G
ORDERING INFORMATION
BASE
MARKING DIAGRAM
2
http://onsemi.com
x = 45A Devices
= Assembly Location
= Year
= Work Week
= Pb−Free Package
AYWW G
1
W45x
MPS
TAPE & REEL
AMMO PACK
BENT LEAD
2
G
Publication Order Number:
3
COLLECTOR 3
EMITTER 1
TO−92 1 WATT
CASE 29−10
(TO−226)
STYLE 1
MPSW45/D

Related parts for MPSW45

MPSW45 Summary of contents

Page 1

... STYLE BENT LEAD BULK PACK TAPE & REEL AMMO PACK MARKING DIAGRAM MPS W45x AYWW G G MPSW45x = Device Code x = 45A Devices A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Publication Order Number: MPSW45/D ...

Page 2

... V = 5.0 Vdc 100 MHz Collector−Base Capacitance ( Vdc 1.0 MHz Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0 25°C unless otherwise noted) A MPSW45 MPSW45A MPSW45 MPSW45A MPSW45 MPSW45A IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 Symbol Min Max Unit V ...

Page 3

BANDWIDTH = 1.0 Hz ≈ 200 100 50 100 1 5 100 200 500 FREQUENCY ...

Page 4

SMALL−SIGNAL CHARACTERISTICS 20 10 7.0 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2 REVERSE VOLTAGE (VOLTS) R Figure 6. Capacitance 200 125°C J 100 25° ...

Page 5

... Figure 13. Active Region Safe Operating Area ORDERING INFORMATION Device MPSW45G MPSW45RLREG MPSW45A MPSW45AG MPSW45ARLRA MPSW45ARLRAG MPSW45AZL1 MPSW45AZL1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 2.0 5.0 10 ...

Page 6

... G 0.094 0.102 2.40 2.80 J 0.018 0.024 0.46 0.61 K 0.500 --- 12.70 --- N 0.080 0.105 2.04 2.66 P --- 0.100 --- 2.54 R 0.135 --- 3.43 --- V 0.135 --- 3.43 --- ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MPSW45/D ...

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