MMBT3904LT1 ON Semiconductor, MMBT3904LT1 Datasheet

TRANS SS GP NPN 40V SOT23

MMBT3904LT1

Manufacturer Part Number
MMBT3904LT1
Description
TRANS SS GP NPN 40V SOT23
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMBT3904LT1

Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
225mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Other names
MMBT3904LT1OSCT

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MMBT3904LT1G
General Purpose Transistor
NPN Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
3. Reference SOA curve.
© Semiconductor Components Industries, LLC, 2011
January, 2011 − Rev. 10
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak (Note 3)
Total Device Dissipation FR− 5 Board
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2)
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(Note 1) @T
Derate above 25°C
@T
Derate above 25°C
A
= 25°C
Characteristic
A
Rating
= 25°C
Symbol
Symbol
T
V
V
V
R
R
J
I
P
P
CEO
CBO
, T
EBO
CM
I
qJA
qJA
C
D
D
stg
−55 to +150
Value
Max
200
900
225
556
300
417
6.0
1.8
2.4
40
60
1
mW/°C
mW/°C
mAdc
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
°C
†For information on tape and reel specifications,
MMBT3904LT1G
MMBT3904LT3G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
Device
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
1
ORDERING INFORMATION
1AM = Specific Device Code
M
G
BASE
2
MARKING DIAGRAM
3
http://onsemi.com
1
= Date Code*
= Pb−Free Package
1
(Pb−Free)
(Pb−Free)
Package
SOT−23
SOT−23
COLLECTOR
1AM M G
EMITTER
Publication Order Number:
G
SOT−23 (TO−236)
3
2
CASE 318
STYLE 6
10,000/Tape & Reel
3000 / Tape & Reel
MMBT3904LT1/D
Shipping

Related parts for MMBT3904LT1

MMBT3904LT1 Summary of contents

Page 1

... Pb−Free Package G (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping SOT−23 3000 / Tape & Reel (Pb−Free) SOT−23 10,000/Tape & Reel (Pb−Free) Publication Order Number: MMBT3904LT1/D † ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I C Collector −Base Breakdown Voltage ( mAdc Emitter−Base Breakdown Voltage ( mAdc Base Cutoff Current ( Vdc ...

Page 3

TYPICAL TRANSIENT CHARACTERISTICS 10 7.0 5.0 C ibo 3.0 C obo 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS VOLTAGE (VOLTS) Figure 3. Capacitance 500 300 200 100 ...

Page 4

TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS ( SOURCE RESISTANCE = 200 1 SOURCE RESISTANCE = 200 0 SOURCE RESISTANCE = 1 ...

Page 5

T = +150°C J +25°C 100 - 55° 0.1 1.0 1 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 TYPICAL STATIC CHARACTERISTICS COLLECTOR CURRENT (mA) C Figure ...

Page 6

0 0.6 0.5 0.4 0.3 0.2 0.1 0 0.001 0. COLLECTOR CURRENT (A) C Figure 17. Collector Emitter Saturation Voltage vs. Collector Current 1.4 1 1.0 ...

Page 7

... ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBT3904LT1/D ...

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