MMBT4403LT1 ON Semiconductor, MMBT4403LT1 Datasheet - Page 3

• Manufacturer Part Number: MMBT4403LT1
• Description: TRANS SS GP PNP 40V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBT4403LT1

• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 2V
• Power - Max: 225mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Dc: 0526
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MMBT4403LT1OSCT

100
7.0
10
5.0
70
50
30
20
10
8
6
4
2
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0
0.01 0.02 0.05
10
10
10
20
20
Figure 7. Frequency Effects
0.1
I
30
C
I
30
C
Figure 3. Charge Data
, COLLECTOR CURRENT (mA)
I
I
I
I
0.2
C
C
C
C
Figure 5. Rise Time
, COLLECTOR CURRENT (mA)
= 1.0 mA, R
= 500 mA, R
= 50 mA, R
= 100 mA, R
f, FREQUENCY (kHz)
R
S
= OPTIMUM SOURCE RESISTANCE
50
0.5
50
1.0
S
70 100
S
70
S
S
SMALL−SIGNAL CHARACTERISTICS
= 2.7 kW
= 430 W
= 560 W
= 1.6 kW
2.0 5.0
Q
T
100
V
CE
Q
TRANSIENT CHARACTERISTICS
10
= −10 Vdc, T
A
V
I
200
C
V
I
200
CC
/I
C
CC
B
/I
20
B
= 30 V
= 10
= 30 V
= 10
300
300
http://onsemi.com
50
25°C
500
100
A
500
= 25°C; Bandwidth = 1.0 Hz
3
10
200
100
100
8
6
4
2
0
7.0
5.0
70
50
30
20
70
50
30
20
10
50
10
10
100°C
100
Figure 8. Source Resistance Effects
f = 1 kHz
NOISE FIGURE
200
I
t
20
20
B1
s
′ = t
= I
R
S
s
B2
, SOURCE RESISTANCE (OHMS)
- 1/8 t
Figure 4. Turn−On Time
I
I
Figure 6. Storage Time
I
30
30
C
C
C
500
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
= 50 mA
100 mA
500 mA
1.0 mA
f
1 k
50
50
I
C
2 k
70
70
/I
B
= 20
100
100
5 k
t
t
t
t
r
r
d
d
@ V
@ V
@ V
@ V
I
C
10 k 20 k
/I
200
B
200
CC
CC
I
BE(off)
BE(off)
C
= 10
/I
= 30 V
= 10 V
B
= 10
= 2 V
= 0
300
300
50 k
500
500