MMBTA55LT1 ON Semiconductor, MMBTA55LT1 Datasheet

TRANS DRIVER SS PNP 60V SOT23

MMBTA55LT1

Manufacturer Part Number
MMBTA55LT1
Description
TRANS DRIVER SS PNP 60V SOT23
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMBTA55LT1

Transistor Type
PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
250mV @ 10mA, 100mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 1V
Power - Max
225mW
Frequency - Transition
50MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MMBTA55LT1OSCT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBTA55LT1
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MMBTA55LT1G
Manufacturer:
ON Semiconductor
Quantity:
1 100
Part Number:
MMBTA55LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMBTA55LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
MMBTA55LT1G,
MMBTA56LT1G
Driver Transistors
PNP Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 6
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation FR− 5 Board
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(Note 1) T
Derate above 25°C
Substrate, (Note 2) T
Derate above 25°C
Characteristic
A
= 25°C
Rating
A
= 25°C
MMBTA55
MMBTA56
MMBTA55
MMBTA56
Symbol
Symbol
T
V
V
V
R
R
J
P
P
CEO
CBO
EBO
, T
I
qJA
qJA
C
D
D
stg
−55 to +150
Value
−500
−4.0
Max
−60
−80
−60
−80
225
556
300
417
1.8
2.4
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
°C
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
2xx = Device Code
M
G
ORDERING INFORMATION
MARKING DIAGRAM
= Date Code*
= Pb−Free Package
BASE
http://onsemi.com
x = H for MMBTA55LT1
xx = GM for MMBTA56LT1
1
1
1
CASE 318
STYLE 6
SOT−23
2xx M G
COLLECTOR
2
EMITTER
G
Publication Order Number:
3
2
3
MMBTA55LT1/D

Related parts for MMBTA55LT1

MMBTA55LT1 Summary of contents

Page 1

... SOT−23 CASE 318 STYLE 6 MARKING DIAGRAM 2xx 2xx = Device Code for MMBTA55LT1 for MMBTA56LT1 M = Date Code Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Publication Order Number: ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note −1.0 mAdc Emitter −Base Breakdown Voltage (I = −100 mAdc Collector Cutoff Current (V = −60 Vdc, ...

Page 3

25°C J 100 -2.0 -3.0 -5.0 -7.0 -10 -20 - COLLECTOR CURRENT (mA) C Figure 2. Current−Gain — Bandwidth Product 1.0 k 700 500 300 200 ...

Page 4

... I , COLLECTOR CURRENT (mA) C Figure 10. Base−Emitter Temperature Coefficient ORDERING INFORMATION Device Order Number MMBTA55LT1G MMBTA55LT3G MMBTA56LT1G MMBTA56LT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. -1.0 -0.8 - ...

Page 5

... ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBTA55LT1/D ...

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