MJF18004 ON Semiconductor, MJF18004 Datasheet

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MJF18004

Manufacturer Part Number
MJF18004
Description
TRANS PWR NPN 5A 450V TO220FP
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Datasheet

Specifications of MJF18004

Transistor Type
NPN
Current - Collector (ic) (max)
5A
Voltage - Collector Emitter Breakdown (max)
450V
Vce Saturation (max) @ Ib, Ic
750mV @ 500mA, 2.5A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
14 @ 300mA, 5V
Power - Max
35W
Frequency - Transition
13MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MJF18004OS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MJF18004
Manufacturer:
MICROSEMI
Quantity:
10 000
Part Number:
MJF18004G
Manufacturer:
PANASONIC
Quantity:
2 000
Part Number:
MJF18004G
Manufacturer:
ON/安森美
Quantity:
20 000
MJE18004G, MJF18004G
SWITCHMODEt
NPN Bipolar Power Transistor
For Switching Power Supply Applications
die designed for use in 220 V line−operated SWITCHMODE Power
supplies and electronic light ballasts.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
2. Proper strike and creepage distance must be provided.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 9
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Emitter−Base Voltage
Collector Current
Base Current
RMS Isolation Voltage (Note 2)
Total Device Dissipation @ T
Derate above 25°C
Operating and Storage Temperature
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
The MJE/MJF18004G have an applications specific state−of−the−art
Reproducible Parametric Distributions
#E69369
Improved Efficiency Due to Low Base Drive Requirements:
Full Characterization at 125_C
ON Semiconductor Six Sigma Philosophy Provides Tight and
Two Package Choices: Standard TO−220 or Isolated TO−220
MJF18004, Case 221D, is UL Recognized at 3500 V
These Devices are Pb−Free and are RoHS Compliant*
High and Flat DC Current Gain h
Fast Switching
No Coil Required in Base Circuit for Turn−Off (No Current Tail)
(for 1 sec, R.H. < 30%, T
Characteristics
Test No. 1 Per Figure 22a
Test No. 2 Per Figure 22b
Test No. 3 Per Figure 22c
Rating
− Continuous
− Peak (Note 1)
− Continuous
− Peak (Note 1)
C
= 25_C
A
MJE18004
MJE18004
MJE18004
MJF18004
MJF18004
MJF18004
= 25_C)
FE
Symbol
Symbol
T
V
V
V
V
R
R
J
I
I
ISOL
P
CEO
EBO
, T
T
CES
CM
BM
I
I
qJC
qJA
C
B
D
L
stg
MJF18004
−65 to 150
Value
1000
4500
3500
1500
0.28
Max
1.65
3.55
62.5
450
260
9.0
5.0
2.0
4.0
0.6
10
75
35
RMS
: File
1
W/_C
_C/W
_C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
Adc
_C
_C
W
V
1
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
*For additional information on our Pb−Free strategy
1
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
2
2
3
3
POWER TRANSISTOR
G
A
Y
WW
ORDERING INFORMATION
TO−220 FULLPACK
35 and 75 WATTS
UL RECOGNIZED
CASE 221A−09
5.0 AMPERES
http://onsemi.com
CASE 221D
1000 VOLTS
TO−220AB
STYLE 1
STYLE 2
= Pb−Free Package
= Assembly Location
= Year
= Work Week
Publication Order Number:
DIAGRAMS
MARKING
MJE18004G
MJF18004G
MJE18004/D
AYWW
AYWW

Related parts for MJF18004

MJF18004 Summary of contents

Page 1

... ON Semiconductor Six Sigma Philosophy Provides Tight and Reproducible Parametric Distributions • Two Package Choices: Standard TO−220 or Isolated TO−220 • MJF18004, Case 221D Recognized at 3500 V #E69369 • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector−Emitter Sustaining Voltage Collector− ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

Page 3

Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ...

Page 4

TYPICAL STATIC CHARACTERISTICS 100 T = 125° 20° 25° 0.01 0.10 1. COLLECTOR CURRENT (AMPS) C Figure 1. DC Current Gain @ 1 Volt 2.0 1.5 1.5 A ...

Page 5

TYPICAL SWITCHING CHARACTERISTICS 1800 B(off) C 1600 V = 300 1400 1200 1000 800 600 400 200 ...

Page 6

... FORCED GAIN FE Figure 13. Inductive Fall Time GUARANTEED SAFE OPERATING AREA INFORMATION 100 DC (MJE18004 1.0 DC (MJF18004) 0.1 0.01 10 100 V , COLLECTOR-EMITTER VOLTAGE (VOLTS) CE Figure 15. Forward Bias Safe Operating Area 1.0 0.8 0.6 0.4 THERMAL 0.2 DERATING 100 T , CASE TEMPERATURE (°C) C Figure 17. Forward Bias Power Derating ...

Page 7

dyn dyn 90 TIME Figure 18. Dynamic Saturation Voltage Measurements ...

Page 8

... SINGLE PULSE 0.01 0.01 0.10 Figure 20. Typical Thermal Response (Z 1. 0.5 0.2 0.10 0.1 0.05 0.02 SINGLE PULSE 0.01 0.01 0.10 Figure 21. Typical Thermal Response for MJF18004 ORDERING INFORMATION Device MJE18004 MJE18004G MJF18004 MJF18004G TYPICAL THERMAL RESPONSE P (pk DUTY CYCLE 1.00 10 ...

Page 9

... Additional tests on slotted 4−40 screws indicate that the screw slot fails between package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recom- . ...

Page 10

PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. SEATING −T− 2. CONTROLLING DIMENSION: INCH. ...

Page 11

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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