MJH6287 ON Semiconductor, MJH6287 Datasheet

TRANS DARL PNP 20A 100V TO218

MJH6287

Manufacturer Part Number
MJH6287
Description
TRANS DARL PNP 20A 100V TO218
Manufacturer
ON Semiconductor
Datasheet

Specifications of MJH6287

Transistor Type
PNP - Darlington
Current - Collector (ic) (max)
20A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
3V @ 200mA, 20A
Current - Collector Cutoff (max)
1mA
Dc Current Gain (hfe) (min) @ Ic, Vce
750 @ 10A, 3V
Power - Max
160W
Frequency - Transition
4MHz
Mounting Type
Through Hole
Package / Case
SOT-93, TO-218 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MJH6287OS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MJH6287
Manufacturer:
ON
Quantity:
1
Part Number:
MJH6287G
Manufacturer:
ON
Quantity:
30 000
MJH6284 (NPN),
MJH6287 (PNP)
Darlington Complementary
Silicon Power Transistors
low-speed switching motor control applications.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb-Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2007
October, 2007 - Rev. 6
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T
Derate above 25_C
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction-to-Case
These devices are designed for general-purpose amplifier and
Similar to the Popular NPN 2N6284 and the PNP 2N6287
Rugged RBSOA Characteristics
Monolithic Construction with Built-in Collector-Emitter Diode
Pb-Free Packages are Available*
160
140
120
100
80
60
40
20
0
0
Characteristic
25
Rating
- Continuous
- Peak
50
Figure 1. Power Derating
T
C
, CASE TEMPERATURE (°C)
75
Preferred Device
C
= 25_C
100
125
Symbol
Symbol
T
V
R
J
V
V
P
CEO
, T
I
I
qJC
CB
EB
C
B
D
stg
150
–65 to +150
175
Max
1.28
Max
0.78
100
100
160
5.0
0.5
20
40
200
1
W/_C
_C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
Adc
_C
W
Preferred devices are recommended choices for future use
and best overall value.
MJH6284
MJH6284G
MJH6287
MJH6287G
COMPLEMENTARY SILICON
Device
DARLINGTON 20 AMPERE
POWER TRANSISTORS
100 VOLTS, 160 WATTS
A
Y
WW
G
MJH628x = Device Code
ORDERING INFORMATION
http://onsemi.com
CASE 340D
(Pb-Free)
(Pb-Free)
(TO-218)
= Assembly Location
= Year
= Work Week
= Pb-Free Package
Package
SOT-93
SOT-93
SOT-93
SOT-93
SOT-93
x = 4 or 7
Publication Order Number:
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
MARKING
DIAGRAM
Shipping
MJH628x
MJH6284/D
AYWWG

Related parts for MJH6287

MJH6287 Summary of contents

Page 1

... MJH6284 (NPN), MJH6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These devices are designed for general-purpose amplifier and low-speed switching motor control applications. Features • Similar to the Popular NPN 2N6284 and the PNP 2N6287 • Rugged RBSOA Characteristics • Monolithic Construction with Built-in Collector-Emitter Diode • ...

Page 2

... V1 APPROX + 4 8 ≤ for DUTY CYCLE = 1.0% and For NPN test circuit reverse diode and voltage polarities. Figure 2. Switching Times Test Circuit MJH6284 (NPN), MJH6287 (PNP 25_C unless otherwise noted 0.1 Adc 150_C 3.0 Vdc 200 mAdc 3.0 Vdc 1.0 MHz) ...

Page 3

... V , COLLECTOR-EMITTER VOLTAGE (VOLTS) CE Figure 5. MJH6284, MJH6287 FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate ...

Page 4

... MJH6284 (NPN), MJH6287 (PNP) NPN 3000 2000 T = 150°C J 1000 25°C 500 300 - 55°C 200 150 0.2 0.3 0.5 1.0 2.0 3 COLLECTOR CURRENT (AMPS) C 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1 5.0 A 1.0 C 0.8 1.0 2.0 3.0 5 BASE CURRENT (mA ...

Page 5

... PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT:  Literature Distribution Center for ON Semiconductor  P.O. Box 5163, Denver, Colorado 80217 USA  Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada  Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada  Email: orderlit@onsemi.com MJH6284 (NPN), MJH6287 (PNP) PACKAGE DIMENSIONS SOT-93 (TO-218) CASE 340D-02 ISSUE ...

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