MJE15030 ON Semiconductor, MJE15030 Datasheet

TRANS PWR NPN 8A 150V TO220AB

MJE15030

Manufacturer Part Number
MJE15030
Description
TRANS PWR NPN 8A 150V TO220AB
Manufacturer
ON Semiconductor
Datasheet
1.MJE15029G.pdf (6 pages)

Specifications of MJE15030

Transistor Type
NPN
Current - Collector (ic) (max)
8A
Voltage - Collector Emitter Breakdown (max)
150V
Vce Saturation (max) @ Ib, Ic
500mV @ 100mA, 1A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 4A, 2V
Power - Max
50W
Frequency - Transition
30MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MJE15030OS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MJE15030G
Quantity:
1 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MJE15030G
Manufacturer:
ON
Quantity:
50 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
MJE15030G
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
H&T Electronics H&T Electronics
Part Number:
MJE15030G
Quantity:
20
MJE15028, MJE15030 (NPN)
MJE15029, MJE15031 (PNP)
Complementary Silicon
Plastic Power Transistors
audio amplifiers.
Features
•
•
•
•
•
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 4
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T
Derate above 25°C
Total Device Dissipation @ T
Derate above 25°C
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
These devices are designed for use as high−frequency drivers in
DC Current Gain Specified to 4.0 Amperes
Collector−Emitter Sustaining Voltage −
High Current Gain − Bandwidth Product
TO−220AB Compact Package
Pb−Free Packages are Available*
h
V
f
T
FE
CEO(sus)
= 30 MHz (Min) @ I
Characteristics
= 40 (Min) @ I
= 20 (Min) @ I
Rating
MJE15028, MJE15029
MJE15030, MJE15031
MJE15028, MJE15029
MJE15030, MJE15031
= 120 Vdc (Min); MJE15028, MJE15029
= 150 Vdc (Min); MJE15030, MJE15031
− Continuous
− Peak
Preferred Device
C
C
C
C
= 25_C
= 25_C
= 3.0 Adc
= 4.0 Adc
C
= 500 mAdc
Symbol
Symbol
T
V
R
R
J
V
V
I
P
P
CEO
, T
CM
I
I
qJC
qJA
CB
EB
C
B
D
D
stg
Value
−65 to
0.016
+150
0.40
Max
62.5
120
150
120
150
5.0
8.0
2.0
2.0
2.5
16
50
1
W/_C
W/_C
_C/W
_C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
Adc
_C
W
W
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
COMPLEMENTARY SILICON
120−150 VOLTS, 50 WATTS
POWER TRANSISTORS
MJE150xx = Device Code
G
A
Y
WW
1
ORDERING INFORMATION
2
3
MARKING DIAGRAM
http://onsemi.com
8 AMPERE
MJE150xxG
= Pb−Free Package
= Assembly Location
= Year
= Work Week
AY WW
x = 28, 29, 30, or 31
CASE 221A−09
Publication Order Number:
TO−220AB
STYLE 1
MJE15028/D

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MJE15030 Summary of contents

Page 1

... Adc (Min 4.0 Adc C • Collector−Emitter Sustaining Voltage − 120 Vdc (Min); MJE15028, MJE15029 CEO(sus) = 150 Vdc (Min); MJE15030, MJE15031 • High Current Gain − Bandwidth Product MHz (Min 500 mAdc T C • TO−220AB Compact Package • Pb−Free Packages are Available* ...

Page 2

... MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ELECTRICAL CHARACTERISTICS Î ...

Page 3

... MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) 1.0 0 0.5 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.05 0.02 0.03 0.02 0.01 SINGLE PULSE 0.01 0.01 0.02 0.05 0.1 0 100 1.0 BONDING WIRE LIMITED THERMALLY LIMITED SECOND BREAKDOWN LIMITED @ T = 25°C C 0.1 ...

Page 4

... MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) 100 0 25°C C NPN 10 5.0 0.5 0.7 1.0 2.0 3.0 f, FREQUENCY (MHz) Figure 6. Small−Signal Current Gain NPN — MJE15028 MJE15030 1K 500 T = 150°C J 200 150 T = 25°C J 100 −55° 0.1 0.2 0.5 1.0 2 ...

Page 5

... MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP 25°C J 0.2 t (PNP) r 0.1 0.05 0.03 t (NPN) r 0.02 0.01 0.1 0.2 0.5 1.0 2 COLLECTOR CURRENT (AMP) C Figure 10. Turn−On Times ORDERING INFORMATION Device MJE15028 MJE15028G MJE15029 MJE15029G MJE15030 MJE15030G MJE15031 MJE15031G 5.0 3.0 t (NPN, PNP ...

Page 6

... MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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