MJE13009 ON Semiconductor, MJE13009 Datasheet

TRANS PWR NPN 12A 400V TO220AB

MJE13009

Manufacturer Part Number
MJE13009
Description
TRANS PWR NPN 12A 400V TO220AB
Manufacturer
ON Semiconductor
Datasheet

Specifications of MJE13009

Transistor Type
NPN
Current - Collector (ic) (max)
12A
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
3V @ 3A, 12A
Dc Current Gain (hfe) (min) @ Ic, Vce
8 @ 5A, 5V
Power - Max
2W
Frequency - Transition
4MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Other names
MJE13009OS

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MJE13009
SWITCHMODEt Series
NPN Silicon Power
Transistors
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V SWITCHMODE applications
such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 7
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector−Emitter Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Base Current
Emitter Current
Total Device Dissipation @ T
Derate above 25°C
Total Device Dissipation @ T
Derate above 25°C
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
The MJE13009 is designed for high−voltage, high−speed power
100_C is 120 ns (Typ)
V
Reverse Bias SOA with Inductive Loads @ T
Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C t
700 V Blocking Capability
SOA and Switching Applications Information
Pb−Free Package is Available*
CEO(sus)
400 V and 300 V
Characteristics
Rating
− Continuous
− Peak (Note 1)
− Continuous
− Peak (Note 1)
− Continuous
− Peak (Note 1)
Preferred Device
C
C
= 25_C
= 25_C
V
Symbol
Symbol
T
CEO(sus)
V
V
R
R
J
I
I
I
P
P
, T
T
CEV
EBO
CM
BM
EM
I
I
I
qJA
qJC
C
B
E
D
D
L
stg
C
= 100_C
Value
−65 to
+150
Max
62.5
1.25
400
700
100
800
275
12
24
12
18
36
16
9
6
2
c
1
@ 8 A,
W/_C
W/_C
_C/W
_C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
_C
_C
W
W
Preferred devices are recommended choices for future use
and best overall value.
MJE13009
MJE13009G
Device
400 VOLTS − 100 WATTS
POWER TRANSISTOR
1
ORDERING INFORMATION
2
A
Y
WW = Work Week
G
3
MARKING DIAGRAM
http://onsemi.com
NPN SILICON
12 AMPERE
= Assembly Location
= Year
= Pb−Free Package
(Pb−Free)
MJE13009G
Package
TO−220
TO−220
AY WW
CASE 221A−09
Publication Order Number:
TO−220AB
STYLE 1
50 Units / Rail
50 Units / Rail
Shipping
MJE13009/D

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MJE13009 Summary of contents

Page 1

... Preferred Device SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. ...

Page 2

... Crossover Time B1 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î MJE13009 (T = 25_C unless otherwise noted) C Î Î Î Î Î Î Î Î ...

Page 3

... D = 0.5 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.05 0.02 0.03 0.02 0.01 SINGLE PULSE 0.01 0.01 0.02 0.05 0.1 0.2 MJE13009 σ 100 m 10 σ 200 300 500 0 100 V , COLLECTOR−EMITTER CLAMP VOLTAGE (VOLTS) CEV Figure 2. Reverse Bias Switching Safe ...

Page 4

... J 125°C 100 100°C 10 75°C 50°C 1 25°C REVERSE FORWARD 0.1 −0.4 −0 BASE−EMITTER VOLTAGE (VOLTS) BE Figure 9. Collector Cutoff Region MJE13009 2 1 1.2 0.8 0 0.05 0.07 0.1 Figure 6. Collector Saturation Region 0.7 0.6 0.5 0.4 ...

Page 5

... Adjusted for Desired Adjusted for Desired Coil Data: Ferroxcube Core #6656 Full Bobbin (~16 Turns) #16 OUTPUT WAVEFORMS t CLAMPED f I UNCLAMPED ≈ CEM clamp t TIME 2 MJE13009 + MJE210 L MR826* 1N4933 V I clamp *SELECTED FOR ≥ 5 D.U.T. MJE200 47 100 − V BE(off) GAP for 200 mH/ 200 300 Vdc ...

Page 6

... SOA curves. In circuits A and D, inductive reactance is clamped by the diodes shown. In circuits B and C the voltage is clamped by MJE13009 the output rectifiers, however, the voltage induced in the primary leakage inductance is not clamped by these diodes and could be large enough to destroy the device. A snubber network or an additional clamp may be required to keep the turn− ...

Page 7

... I , COLLECTOR CURRENT (AMP) C Figure 11. Turn−On Time I C 90% V CEM clamp 10% V CEM I 90 TIME Figure 13. Inductive Switching Measurements MJE13009 2K 1K 700 500 300 200 100 0.2 0.3 0 clamp 90 10 Figure 14. Typical Inductive Switching Waveforms (at 300 V and 12 A with I http://onsemi ...

Page 8

... PUSH−PULL INVERTER/CONVERTER SOLENOID DRIVER 100° SOLENOID D MJE13009 LOAD LINE DIAGRAMS TURN−ON (FORWARD BIAS) SOA ≤ DUTY CYCLE ≤ 10 4000 100°C D 350 V TURN−OFF (REVERSE BIAS) SOA TURN− 1.5 V ≤ BE(off) DUTY CYCLE ≤ 10% TURN− OFF ...

Page 9

... Current Fall Time, 90−10 Current Tail, 10− Crossover Time, 10 CEM An enlarged portion of the turn−off waveforms is shown in Figure 13 to aid in the visual identity of these terms. MJE13009 Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ...

Page 10

... V 0.045 −−− 1.15 −−− Z −−− 0.080 −−− 2.04 STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MJE13009/D ...

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