BC817-40LT1 ON Semiconductor, BC817-40LT1 Datasheet

TRANS NPN GP 500MA 45V SOT23

BC817-40LT1

Manufacturer Part Number
BC817-40LT1
Description
TRANS NPN GP 500MA 45V SOT23
Manufacturer
ON Semiconductor
Datasheet

Specifications of BC817-40LT1

Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
700mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 100mA, 1V
Power - Max
225mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Other names
BC817-40LT1OSCT

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Company
Part Number
Manufacturer
Quantity
Price
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Manufacturer:
ON
Quantity:
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Manufacturer:
ON
Quantity:
30 000
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Manufacturer:
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BC817-16LT1G,
BC817-25LT1G,
BC817-40LT1G
General Purpose
Transistors
NPN Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 11
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation FR− 5 Board,
(Note 1) T
Thermal Resistance,
Total Device Dissipation
Alumina Substrate, (Note 2)
Thermal Resistance,
Junction and Storage Temperature
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Derate above 25°C
Junction−to−Ambient
T
Derate above 25°C
Junction−to−Ambient
A
A
Characteristic
= 25°C
= 25°C
Rating
Symbol
Symbol
T
V
V
V
R
R
J
P
P
CEO
CBO
, T
EBO
I
qJA
qJA
C
D
D
stg
−55 to +150
Value
Max
500
225
556
300
417
5.0
1.8
2.4
45
50
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
mW
mW
°C
V
V
V
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
ORDERING INFORMATION
6x
M
G
MARKING DIAGRAM
http://onsemi.com
BASE
1
1
= Device Code
= Date Code*
= Pb−Free Package
1
x = A, B, or C
CASE 318
STYLE 6
SOT−23
6x M G
COLLECTOR
2
Publication Order Number:
G
EMITTER
3
2
3
BC817−16LT1/D

Related parts for BC817-40LT1

BC817-40LT1 Summary of contents

Page 1

... BC817-16LT1G, BC817-25LT1G, BC817-40LT1G General Purpose Transistors NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− ...

Page 2

... Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise noted) A Symbol V (BR)CEO V (BR)CES V (BR)EBO BC817−16 BC817−25 BC817− Specific Marking Package SOT−23 (Pb−Free) 6A SOT−23 (Pb−Free) SOT− ...

Page 3

... TYPICAL CHARACTERISTICS − BC817−16LT1 300 150°C 200 25°C −55°C 100 0 0.001 0. COLLECTOR CURRENT (A) C Figure 1. DC Current Gain vs. Collector Current 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0. COLLECTOR CURRENT (A) C Figure 3. Base Emitter Saturation Voltage vs. ...

Page 4

... TYPICAL CHARACTERISTICS − BC817−16LT1 1 25°C J 0.8 0 100 mA 300 mA C 0.4 0.2 0 0.01 0 BASE CURRENT (mA) B Figure 5. Saturation Region 100 500 100 1 Figure 6. Temperature Coefficients REVERSE VOLTAGE (VOLTS) R Figure 7. Capacitances http://onsemi.com 4 for V CE(sat) q for 100 I , COLLECTOR CURRENT (mA) ...

Page 5

... TYPICAL CHARACTERISTICS − BC817−25LT1 500 150°C 400 300 25°C 200 −55°C 100 0 0.001 0. COLLECTOR CURRENT (A) C Figure 8. DC Current Gain vs. Collector Current 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0. COLLECTOR CURRENT (A) C Figure 10. Base Emitter Saturation Voltage vs. ...

Page 6

... TYPICAL CHARACTERISTICS − BC817−25LT1 1 25°C J 0.8 0 100 mA 300 mA C 0.4 0.2 0 0.01 0 BASE CURRENT (mA) B Figure 13. Saturation Region 100 500 100 1 Figure 14. Temperature Coefficients REVERSE VOLTAGE (VOLTS) R Figure 15. Capacitances http://onsemi.com 6 for V CE(sat) q for 100 I , COLLECTOR CURRENT (mA) ...

Page 7

... TYPICAL CHARACTERISTICS − BC817−40LT1 700 150°C 600 500 25°C 400 300 −55°C 200 100 0 0.001 0. COLLECTOR CURRENT (A) C Figure 16. DC Current Gain vs. Collector Current 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0. COLLECTOR CURRENT (A) C Figure 18. Base Emitter Saturation Voltage vs. ...

Page 8

... TYPICAL CHARACTERISTICS − BC817−40LT1 1 25°C J 0.8 0 100 mA 300 mA C 0.4 0.2 0 0.01 0 BASE CURRENT (mA) B Figure 21. Saturation Region 100 500 100 1 Figure 22. Temperature Coefficients REVERSE VOLTAGE (VOLTS) R Figure 23. Capacitances http://onsemi.com 8 for V CE(sat) q for 100 I , COLLECTOR CURRENT (mA) ...

Page 9

... TYPICAL CHARACTERISTICS − BC817−16LT1, BC817−25LT1, BC817−40LT1 1 Thermal Limit 0.1 0.01 Single Pulse Test @ T A 0.001 0.01 0.1 Figure 24. Safe Operating Area http://onsemi.com 1 ms 100 25° 100 V (Vdc ...

Page 10

... E STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR 2.0 mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BC817−16LT1/D MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 ...

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