MJD112T4 ON Semiconductor, MJD112T4 Datasheet - Page 5

• Manufacturer Part Number: MJD112T4
• Description: TRANS DARL NPN 2A 100V DPAK
• Manufacturer: ON Semiconductor

Specifications of MJD112T4

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 3V @ 40mA, 4A
• Current - Collector Cutoff (max): 20µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 2A, 3V
• Power - Max: 1.75W
• Frequency - Transition: 25MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MJD112T4OSCT

+ 0.8
- 0.8
- 1.6
- 2.4
- 3.2
- 4.8
10
10
10
10
10
10
10
- 4
-1
- 0.6
0
0.04
5
4
3
2
1
0
NPN MJD112
q
T
*q
0.06
*APPLIED FOR I
- 0.4
VC
REVERSE
J
VC
V
= 150°C
FOR V
CE
100°C
FOR V
= 30 V
- 0.2
25°C
0.1
V
BE
BE
CE(sat)
I
, BASE-EMITTER VOLTAGE (VOLTS)
C
, COLLECTOR CURRENT (AMP)
0
C
/I
0.2
BASE
B
PNP
< h
+ 0.2 + 0.4 + 0.6
FORWARD
FE
/3
0.4
25°C TO 150°C
0.6
- 55°C TO 25°C
25°C TO 150°C
≈ 8 k
- 55°C TO 25°C
+ 0.8
1
Figure 11. Collector Cut−Off Region
Figure 10. Temperature Coefficients
Figure 12. Darlington Schematic
≈ 120
+ 1
COLLECTOR
EMITTER
2
http://onsemi.com
+ 1.2 + 1.4
4
5
+ 0.8
- 0.8
- 1.6
- 2.4
- 3.2
- 4.8
10
10
10
10
10
10
10
- 4
BASE
-1
+ 0.6
0.04
0
5
4
3
2
1
0
NPN
PNP MJD117
T
0.06
+ 0.4
*q
q
J
REVERSE
VB
= 150°C
VC
V
*APPLIES FOR I
CE
FOR V
100°C
FOR V
25°C
+ 0.2
= 30 V
0.1
V
BE
≈ 8 k
BE
CE(sat)
I
C
, BASE-EMITTER VOLTAGE (VOLTS)
, COLLECTOR CURRENT (AMP)
0
0.2
C
/I
- 0.2 - 0.4 - 0.6
≈ 120
B
FORWARD
COLLECTOR
< h
EMITTER
FE
/3
0.4
25°C TO 150°C
0.6
- 55°C TO 25°C
25°C TO 150°C
- 0.8
1
- 55°C TO 25°C
- 1
2
- 1.2 - 1.4
4