MJB44H11 ON Semiconductor, MJB44H11 Datasheet - Page 5

• Manufacturer Part Number: MJB44H11
• Description: TRANS PWR NPN COMP 10A 80V D2PAK
• Manufacturer: ON Semiconductor

Specifications of MJB44H11

• Transistor Type: NPN
• Current - Collector (ic) (max): 10A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 1V @ 400mA, 8A
• Current - Collector Cutoff (max): 10µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 4A, 1V
• Power - Max: 2W
• Frequency - Transition: 50MHz
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MJB44H11OS

SEATING
PLANE
−T−
VARIABLE
CONFIGURATION
ZONE
M
VIEW W−W
1
G
−B−
F
1
4
2
3
D
0.13 (0.005)
L
3 PL
S
10.66
0.42
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
M
R
M
MJB44H11 (NPN), MJB45H11 (PNP)
T
VIEW W−W
B
M
K
F
2
8.38
0.33
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
C
N
H
http://onsemi.com
CASE 418B−04
17.02
L
0.67
A
D
ISSUE J
E
J
2
V
PAK 3
W
W
5
M
U
VIEW W−W
3.05
0.12
F
3
1.016
0.04
SCALE 3:1
P
L
5.08
0.20
NOTES:
1. DIMENSIONING AND TOLERANCING
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
STYLE 1:
PER ANSI Y14.5M, 1982.
NEW STANDARD 418B−04.
DIM
PIN 1. BASE
inches
A
B
C
D
G
H
K
M
N
R
E
F
J
L
P
S
V
mm
2. COLLECTOR
3. EMITTER
4. COLLECTOR
0.340
0.380
0.160
0.020
0.045
0.310
0.080
0.018
0.090
0.052
0.280
0.575
0.045
MIN
0.100 BSC
0.197 REF
0.079 REF
0.039 REF
INCHES
0.380
0.405
0.190
0.035
0.055
0.350
0.110
0.025
0.110
0.072
0.320
0.625
0.055
MAX
14.60
MILLIMETERS
MIN
8.64
9.65
4.06
0.51
1.14
7.87
2.03
0.46
2.29
1.32
7.11
1.14
2.54 BSC
5.00 REF
2.00 REF
0.99 REF
10.29
15.88
MAX
9.65
4.83
0.89
1.40
8.89
2.79
0.64
2.79
1.83
8.13
1.40