2N3442 ON Semiconductor, 2N3442 Datasheet
2N3442
Manufacturer Part Number
2N3442
Description
TRANSISTOR NPN 140V 10A BIPO TO3
Manufacturer
ON Semiconductor
Datasheet
1.2N3442G.pdf
(4 pages)
Specifications of 2N3442
Transistor Type
NPN
Current - Collector (ic) (max)
10A
Voltage - Collector Emitter Breakdown (max)
140V
Vce Saturation (max) @ Ib, Ic
5V @ 2A, 10A
Current - Collector Cutoff (max)
200mA
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 3A, 4V
Power - Max
117W
Frequency - Transition
80MHz
Mounting Type
Chassis Mount
Package / Case
TO-204, TO-3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N3442G
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
2N3442JANTX
Manufacturer:
MINI
Quantity:
1 400
2N3442
High−Power Industrial
Transistors
and commercial equipment including high fidelity audio amplifiers,
series and shunt regulators and power switches.
Features
•
•
•
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Indicates JEDEC Registered Data.
2. This data guaranteed in addition to JEDEC registered data.
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 11
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T
Derate above 25_C (Note 2)
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Case
NPN silicon power transistor designed for applications in industrial
Collector −Emitter Sustaining Voltage − V
Excellent Second Breakdown Capability
Pb−Free Package is Available*
Characteristics
Rating
− Continuous
− Peak
− Continuous
− Peak
(Note 1)
C
= 25_C
Symbol
Symbol
T
V
R
J
V
V
P
CEO
, T
I
I
qJC
CB
EB
C
B
D
stg
CEO(sus)
−65 to +200
Value
0.67
Max
1.17
= 140 Vdc (Min)
140
160
117
7.0
7.0
10
15
−
1
W/_C
_C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
Adc
_C
W
2N3442
2N3442G
Device
140 VOLTS − 117 WATTS
POWER TRANSISTOR
ORDERING INFORMATION
2N3442 = Device Code
G
A
Y
WW
MEX
MARKING DIAGRAM
http://onsemi.com
NPN SILICON
10 AMPERE
TO−204AA (TO−3)
(Pb−Free)
Package
= Pb−Free Package
= Assembly Location
= Year
= Work Week
= Country of Origin
TO−204
TO−204
CASE 1−07
STYLE 1
2N3442G
AYWW
MEX
Publication Order Number:
100 Units / Tray
100 Units / Tray
Shipping
2N3442/D
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2N3442 Summary of contents
Page 1
... AMPERE POWER TRANSISTOR NPN SILICON 140 VOLTS − 117 WATTS TO−204AA (TO−3) CASE 1−07 STYLE 1 MARKING DIAGRAM 2N3442G AYWW MEX 2N3442 = Device Code G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week MEX = Country of Origin ORDERING INFORMATION Device Package ...
Page 2
... CE 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%. Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î | • test 2N3442 (T = 25_C unless otherwise noted 150_C kHz) 1.0 0.8 ...
Page 3
... CURRENT LIMIT THERMAL LIMIT @ T = 25°C 0.5 C SINGLE PULSE 0.3 SECOND BREAKDOWN LIMIT 0.2 2.0 3.0 5.0 7 COLLECTOR−EMITTER VOLTAGE (VOLTS) CE Figure 2. 2N3442 400 T = 150°C J 200 100 −55 °C 25° 6.0 4.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 ...
Page 4
... Q 0.151 0.165 3.84 4.19 U 1.187 BSC 30.15 BSC V 0.131 0.188 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. 2N3442/D ...