2N6387 ON Semiconductor, 2N6387 Datasheet

TRANS DARL NPN 60V 8A TO220AB

2N6387

Manufacturer Part Number
2N6387
Description
TRANS DARL NPN 60V 8A TO220AB
Manufacturer
ON Semiconductor
Datasheet

Specifications of 2N6387

Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
10A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
3V @ 100mA, 10A
Current - Collector Cutoff (max)
1mA
Dc Current Gain (hfe) (min) @ Ic, Vce
1000 @ 5A, 3V
Power - Max
2W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Frequency - Transition
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N6387
Manufacturer:
TSC
Quantity:
6 500
Part Number:
2N6387
Manufacturer:
ST
0
Part Number:
2N6387
Manufacturer:
CENTRAL
Quantity:
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Part Number:
2N6387G
Manufacturer:
ON
Quantity:
596
2N6387, 2N6388
Plastic Medium-Power
Silicon Transistors
low-speed switching applications.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
*For additional information on our Pb-Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2007
November, 2007 - Rev. 13
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Base Current
Total Power Dissipation @ T
Derate above 25_C
Total Power Dissipation @ T
Derate above 25_C
Operating and Storage Junction,
Temperature Range
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
These devices are designed for general-purpose amplifier and
High DC Current Gain - h
Collector-Emitter Sustaining Voltage - @ 100 mAdc
Low Collector-Emitter Saturation Voltage -
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
TO-220AB Compact Package
Pb-Free Packages are Available*
V
V
Characteristics
CEO(sus)
CE(sat)
Rating
- Peak
= 2.0 Vdc (Max) @ I
= 5.0 Adc - 2N6387, 2N6388
2N6388 is a Preferred Device
= 60 Vdc (Min) - 2N6387
= 80 Vdc (Min) - 2N6388
(Note 1)
A
C
= 25_C
= 25_C
FE
= 2500 (Typ) @ I
2N6388
2N6387
2N6388
2N6387
Symbol
Symbol
C
T
V
R
R
J
V
V
P
P
CEO
, T
I
I
qJC
qJA
CB
EB
C
B
D
D
stg
C
-65 to +150
= 4.0 Adc
Value
0.016
0.52
Max
1.92
62.5
250
5.0
2.0
60
80
60
80
10
15
65
1
mAdc
_C/W
_C/W
W/°C
W/°C
Unit
Vdc
Vdc
Vdc
Adc
Unit
°C
W
W
Preferred devices are recommended choices for future use
and best overall value.
1
2N6387
2N6387G
2N6388
2N6388G
2
Device
DARLINGTON NPN SILICON
3
65 WATTS, 60 - 80 VOLTS
POWER TRANSISTORS
8 AND 10 AMPERES
ORDERING INFORMATION
2N638x = Device Code
G
A
Y
WW
http://onsemi.com
4
CASE 221A
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
(Pb-Free)
(Pb-Free)
Package
STYLE 1
= Pb-Free Package
= Assembly Location
= Year
= Work Week
x = 7 or 8
Publication Order Number:
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
MARKING
DIAGRAM
Shipping
2N638xG
AYWW
2N6387/D

Related parts for 2N6387

2N6387 Summary of contents

Page 1

... These devices are designed for general-purpose amplifier and low-speed switching applications. Features • High DC Current Gain - h = 2500 (Typ • Collector-Emitter Sustaining Voltage - @ 100 mAdc Vdc (Min) - 2N6387 CEO(sus Vdc (Min) - 2N6388 • Low Collector-Emitter Saturation Voltage - V = 2.0 Vdc (Max CE(sat) = 5.0 Adc - 2N6387, 2N6388 • ...

Page 2

... Small-Signal Current Gain (I = 1.0 Adc, V Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Indicates JEDEC Registered Data. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2N6387, 2N6388 ...

Page 3

... D = 0.5 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.05 0.02 0.03 0.02 0.01 SINGLE PULSE 0.01 0.01 0.02 0.05 0.1 0.2 2N6387, 2N6388 VARIED TO OBTAIN DESIRED CURRENT LEVELS [ 100 100 mA B TUT 8 4.0 V FOR t AND DISCONNECTED AND ...

Page 4

... I , COLLECTOR CURRENT (AMP) C Figure 8. DC Current Gain 2N6387, 2N6388 There are two limitations on the power handling ability of a transistor: average junction temperature and second 10 ms breakdown. Safe operating area curves indicate limits of the transistor that must be observed for reliable 1 ms operation ...

Page 5

... 150° 100° 25° 0.6 - 0 0.2 + 0.4 + 0.6 + 0.8 + 1.0 + 1 BASE-EMITTER VOLTAGE (VOLTS) BE Figure 12. Collector Cut-Off Region 2N6387, 2N6388 + 5 4 4.0 ≤ 3.0 + 2.0 + 1.0 *q for 1.0 - 2.0 - 3.0 q for 4.0 - 5.0 3.0 5.0 7.0 10 0.1 0.2 0.3 Figure 11 ...

Page 6

... PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT:  Literature Distribution Center for ON Semiconductor  P.O. Box 5163, Denver, Colorado 80217 USA  Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada  Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada  Email: orderlit@onsemi.com 2N6387, 2N6388 PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AE SEATING -T- PLANE ...

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