BDV64B ON Semiconductor, BDV64B Datasheet - Page 3

• Manufacturer Part Number: BDV64B
• Description: TRANS DARL PNP 100V 10A TO-218
• Manufacturer: ON Semiconductor

Specifications of BDV64B

• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 10A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 2V @ 20mA, 5A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 5A, 4V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: SOT-93, TO-218 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -

100
50
20
10
5
1
10K
0.1
1K
10
1
4
1
0.1
0.1
Figure 6. Active Region Safe Operating Area
NPN
V
SECONDARY BREAKDOWN
LIMITED @ T
THERMAL LIMIT @ T
BONDING WIRE LIMIT
CE
V
BE(sat)
, COLLECTOR-EMITTER VOLTAGE (V)
Figure 2. DC Current Gain
Figure 4. “On” Voltages
I
I
C
C
@ I
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
C
J
/I
v 150°C
B
= 250
10
C
= 25°C
1
1
BDV65B, BDV64B
dc
V
CE
5.0 ms 1.0 ms
= 4 V
30
100 μs
50
http://onsemi.com
100
10
10
3
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 150_C. T
Figure 7. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
10K
1K
There are two limitations on the power handling ability of
The data of Figure 6 is based on T
1
0.1
10
1
0.1
PNP
0.1
V
BE(sat)
J(pk)
Figure 3. DC Current Gain
I
C
Figure 5. “On” Voltages
@ I
, COLLECTOR CURRENT (A)
I
may be calculated from the data in
C
, COLLECTOR CURRENT (A)
C
/I
B
= 250
1
1
J(pk)
= 150_C, T
C
− V
10
J(pk)
C
CE
10
is