MJD42C ON Semiconductor, MJD42C Datasheet - Page 3

• Manufacturer Part Number: MJD42C
• Description: TRANS POWER PNP 6A 100V DPAK
• Manufacturer: ON Semiconductor

Specifications of MJD42C

• Transistor Type: PNP
• Current - Collector (ic) (max): 6A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 600mA, 6A
• Current - Collector Cutoff (max): 50µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 15 @ 3A, 4V
• Power - Max: 1.75W
• Frequency - Transition: 3MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

500
300
200
100
2.5
1.5
0.5
T
70
50
30
20
10
1.6
1.2
0.8
0.4
A
2
1
0
7
5
2
0
0.06
0.06
T
25
15
10
20
C
5
0
25
V
T
0.1
CE(sat)
0.1
J
T
V
= 25°C
A
BE(sat)
T
SURFACE MOUNT
J
@ I
V
- 55°C
= 150°C
25°C
BE
Figure 3. DC Current Gain
C
@ I
0.2
I
/I
@ V
0.2
50
C
I
Figure 5. “On” Voltages
C
B
, COLLECTOR CURRENT (AMP)
C
, COLLECTOR CURRENT (AMP)
= 10
/I
CE
Figure 1. Power Derating
B
0.3
0.3
= 10
= 4 V
0.4
0.4
T, TEMPERATURE (°C)
T
C
75
0.6
0.6
1
1
100
TYPICAL CHARACTERISTICS
2
2
V
CE
3
= 2 V
125
http://onsemi.com
4
4
6
6
150
3
+11 V
0.07
0.05
0.03
0.02
0.07
0.05
0
0.7
0.5
0.3
0.2
0.1
0.7
0.5
0.3
0.2
0.1
DUTY CYCLE = 1%
2
1
5
3
2
1
0.06
0.06
t
r
, t
- 9 V
f
≤ 10 ns
0.1
0.1
R
REVERSE ALL POLARITIES FOR PNP.
B
Figure 2. Switching Time Test Circuit
D
and R
1
MSB5300 USED ABOVE I
MSD6100 USED BELOW I
25 ms
MUST BE FAST RECOVERY TYPE, e.g.:
C
0.2
0.2
VARIED TO OBTAIN DESIRED CURRENT LEVELS
I
I
C
Figure 4. Turn−On Time
t
C
Figure 6. Turn−Off Time
s
, COLLECTOR CURRENT (AMP)
, COLLECTOR CURRENT (AMP)
t
r
t
f
51
0.4
0.4
R
0.6
0.6
B
B
B
≈ 100 mA
≈ 100 mA
- 4 V
1
1
t
d
D
@ V
1
BE(off)
T
V
I
T
V
I
I
+ 30 V
C
C
B1
V
2
2
J
CC
J
CC
/I
/I
CC
= 25°C
= 25°C
B
B
= I
= 30 V
= 30 V
≈ 5 V
= 10
= 10
R
B2
C
4
4
SCOPE
6
6