MPSA64RLRM ON Semiconductor, MPSA64RLRM Datasheet - Page 2

• Manufacturer Part Number: MPSA64RLRM
• Description: TRANS PNP DARL BIPO 30V TO-92
• Manufacturer: ON Semiconductor

Specifications of MPSA64RLRM

• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 125MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 30V
• Collector-base Voltage: 30V
• Emitter-base Voltage: 10V
• Collector-emitter Saturation Voltage: 1.5@0.1mA@100mAV
• Collector Current (dc) (max): 500mA
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-92
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Not Compliant

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
2. f
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
SMALL− SIGNAL CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Collector −Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter On Voltage
Current −Gain — Bandwidth Product (Note 2)
MPSA62
MPSA63
MPSA63G
MPSA63RLRA
MPSA63RLRAG
MPSA63RLRM
MPSA63RLRMG
MPSA63RLRP
MPSA63RLRPG
MPSA63ZL1
MPSA63ZL1G
MPSA64
MPSA64G
MPSA64RLRA
MPSA64RLRAG
MPSA64RLRM
MPSA64RLRMG
T
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
C
C
C
C
C
C
C
C
= |h
CB
CB
EB
= −100 mAdc, V
= −10 mAdc, V
= −100 mAdc, V
= −10 mAdc, I
= −100 mAdc, I
= −10 mAdc, V
= −100 mAdc, V
= −100 mAdc, V
= −15 Vdc, I
= −10 Vdc, I
fe
= −30 Vdc, I
| S f
test
.
E
C
B
E
CE
CE
B
BE
= 0)
= 0)
= −0.01 mAdc)
= 0)
CE
CE
CE
= −0.1 mAdc)
Device
= −5.0 Vdc)
= −5.0 Vdc)
= 0)
= −5.0 Vdc)
= −5.0 Vdc)
= −5.0 Vdc, f = 100 MHz)
Characteristic
(T
A
= 25°C unless otherwise noted)
MPSA62, MPSA63, MPSA64
http://onsemi.com
MPSA62
MPSA63, MPSA64
MPSA62
MPSA63, MPSA64
MPSA63
MPSA64
MPSA62
MPSA63
MPSA64
MPSA62
MPSA63, MPSA64
MPSA62
MPSA63, MPSA64
MPSA63, MPSA64
2
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
V
Symbol
V
V
(BR)CES
I
CE(sat)
I
BE(on)
h
CBO
EBO
f
FE
T
2000 / Tape & Reel
2000 / Tape & Reel
2000 / Ammo Pack
2000 / Ammo Pack
2000 / Ammo Pack
2000 / Ammo Pack
2000 / Ammo Pack
2000 / Ammo Pack
2000 / Tape & Reel
2000 / Tape & Reel
2000 / Ammo Pack
2000 / Ammo Pack
5000 Units / Bulk
5000 Units / Bulk
5000 Units / Bulk
5000 Units / Bulk
5000 Units / Bulk
Shipping
10,000
20,000
10,000
20,000
5,000
Min
−20
−30
125
−
−
−
−
−
−
−
†
−100
−100
−100
Max
−1.0
−1.5
−1.4
−2.0
−
−
−
−
−
−
−
−
nAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
−