P2N2222AZL1G ON Semiconductor, P2N2222AZL1G Datasheet
P2N2222AZL1G
Specifications of P2N2222AZL1G
Related parts for P2N2222AZL1G
P2N2222AZL1G Summary of contents
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... R 83.3 °C/W qJC Device P2N2222A P2N2222AG P2N2222ARL1 P2N2222ARL1G P2N2222AZL1 P2N2222AZL1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com COLLECTOR 1 2 BASE 3 EMITTER ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage ( mAdc Collector −Base Breakdown Voltage ( mAdc Emitter −Base Breakdown Voltage ( mAdc, I ...
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ELECTRICAL CHARACTERISTICS Characteristic SWITCHING CHARACTERISTICS Delay Time ( Vdc BE(off) Rise Time I = 150 mAdc Vdc 150 mAdc, Storage Time ...
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EB(off EB(off 7.0 5.0 3.0 2.0 5.0 7 100 I , COLLECTOR CURRENT (mA) C ...
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T = 25° BE(sat 0 BE(on) CE 0.4 0 CE(sat 0.1 0.2 0.5 1.0 ...
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... SECTION X−X N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...