UNR911HG0L Panasonic - SSG, UNR911HG0L Datasheet - Page 3

• Manufacturer Part Number: UNR911HG0L
• Description: TRANS PNP W/RES 30HFE SSMINI
• Manufacturer: Panasonic - SSG

Specifications of UNR911HG0L

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 80MHz
• Power - Max: 125mW
• Mounting Type: Surface Mount
• Package / Case: SS Mini 3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: UNR911HG0LTR

■ Electrical Characteristics (continued) T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Emitter-base resistance
Resistance UNR911MG
ratio
Common characteristics chart
Characteristics charts of UNR9110G
−120
−100
−80
−60
−40
−20
150
125
100
75
50
25
0
0
0
0
I
Collector-emitter voltage V
B
= −1.0 mA
Ambient temperature T
− 0.9 mA
−2
UNR911NG
UNR9118G/9119G
UNR9114G
UNR911HG
UNR911TG
UNR911FG
UNR911AG/911VG
UNR9111G/9112G/9113G/911LG
UNR911EG
UNR911DG
Parameter
− 0.8 mA
40
−4
I
P
C
− 0.7 mA
T
 V
 T
−6
80
− 0.6 mA
UNR911CG
CE
− 0.5 mA
a
−8
This product complies with the RoHS Directive (EU 2002/95/EC).
− 0.4 mA
120
T
a
a
− 0.2 mA
− 0.1 mA
− 0.3 mA
= 25°C
−10
CE
( °C )
( V )
−12
160
Symbol
R
R
1
/R
2
2
−10
−10
−10
−10
−1
−10
−1
−2
2
−1
a
Collector current I
−25°C
= 25°C ± 3°C
SJH00222AED
V
−1
CE(sat)
25°C
Conditions
 I
T
−10
a
C
= 75°C
C
I
( mA )
C
/ I
B
= 10
−10
2
400
300
200
100
−30%
0
0.08
0.17
0.17
0.37
1.70
Min
−1
0.8
3.7
UNR911xG Series
Collector current I
0.047
0.10
0.21
0.22
0.47
0.47
2.14
Typ
0.1
1.0
1.0
4.7
47
−10
h
FE
 I
+30%
Max
0.12
0.25
0.27
0.57
2.60
1.2
5.7
C
−10
T
C
a
V
25°C
−25°C
= 75°C
2
( mA )
CE
= –10 V
Unit
kΩ

−10
3
3