DTB114GKT146 Rohm Semiconductor, DTB114GKT146 Datasheet

TRANS PNP 50V 500MA SOT-346

DTB114GKT146

Manufacturer Part Number
DTB114GKT146
Description
TRANS PNP 50V 500MA SOT-346
Manufacturer
Rohm Semiconductor
Datasheet
1.DTB114GKT146.pdf (3 pages)

Specifications of DTB114GKT146

Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
56 @ 50mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Frequency - Transition
200MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DTB114GKT146
DTB114GKT146TR
Transistors
−500mA / −50V Digital transistors
(with built-in resistors)
DTB114GK
Inverter, Interface, Driver
1) The built-in bias resistors consist of thin-film resistors
2) Only the on / off conditions need to be set for
3) Higher mounting densities can be achieved.
PNP epitaxial planar silicon transistor
(Resistor built-in type)
∗ Each pin mounted on the recommended land
Part No.
DTB114GK
Applications
Feature
Structure
Packaging specifications
Absolute maximum ratings (Ta=25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
with complete isolation to allow positive biasing of
the input, and parasitic effects are almost completely
eliminated.
operation, making the device design easy.
Parameter
Package
Packaging type
Basic ordering
unit (pieces)
Code
Taping
SMT3
T146
3000
Symbol
V
V
V
Tstg
Pd
CBO
CEO
EBO
I
Tj
C
∗
−55 to +150
Limits
−500
−50
−50
200
150
−5
R=10kΩ (typ.)
External dimensions (Unit : mm)
(1)Emitter
(2)Base
(3)Collector
Equivalent circuit
SMT3
E : Emitter
C : Collector
B : Base
B
Unit
mW
mA
R
V
V
V
C
C
0.95 0.95
( 3 )
( 2 )
Abbreviated symbol : L14
1.9
2.9
0.4
C
E
( 1 )
Each lead has same dimensions
0.15
1.1
0.8
Rev.B
DTB114GK
1/2

Related parts for DTB114GKT146

Image
Part Number
Description
Manufacturer
Datasheet
Request R
BA6810S
Part Number:
BA6810S
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
BA6810S.pdf (7 pages)
BA3426AS
Part Number:
BA3426AS
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
BA3426AS.pdf (6 pages)
BA3834S
Part Number:
BA3834S
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
BA3834S.pdf (10 pages)
BA3833F
Part Number:
BA3833F
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
BA3833F.pdf (3 pages)
1SR154-400
Part Number:
1SR154-400
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
1SR154-400.pdf (2 pages)
1SR154-600
Part Number:
1SR154-600
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
1SR154-600.pdf (2 pages)
1SR156-400
Part Number:
1SR156-400
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
1SR156-400.pdf (2 pages)
1SR159-200
Part Number:
1SR159-200
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
1SR159-200.pdf (2 pages)
RB160M-30
Part Number:
RB160M-30
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
RB160M-30.pdf (3 pages)
RB161L-40
Part Number:
RB161L-40
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
RB161L-40.pdf (2 pages)
RB060L-40
Part Number:
RB060L-40
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
RB060L-40.pdf (2 pages)
RB050L-40
Part Number:
RB050L-40
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
RB050L-40.pdf (2 pages)
RB051L-40
Part Number:
RB051L-40
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
RB051L-40.pdf (2 pages)
RB053L-30
Part Number:
RB053L-30
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
RB053L-30.pdf (2 pages)
FMP1T148
Part Number:
FMP1T148
Description:
DIODE SWITCH 80V 25MA SMD5 TR
Manufacturer:
Rohm Semiconductor
Datasheet:
FMP1T148.pdf (3 pages)

DTB114GKT146 Summary of contents

Page 1

Transistors −500mA / −50V Digital transistors (with built-in resistors) DTB114GK Applications Inverter, Interface, Driver Feature 1) The built-in bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely ...

Page 2

Transistors Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff curren Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency ∗ Characteristics of built-in transistor Electrical characteristics curves 1000 ...

Page 3

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

Related keywords