UNR32A500L Panasonic - SSG, UNR32A500L Datasheet - Page 2

• Manufacturer Part Number: UNR32A500L
• Description: TRANS NPN W/RES 160HFE SSSMINI3P
• Manufacturer: Panasonic - SSG

Specifications of UNR32A500L

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 80mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 150MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SSS Mini3-F1
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: UNR32A500LTR

UNR32A5
2
120
100
400
300
200
100
100
0.1
80
60
40
20
10
0
0
1
0
1
1
Ambient temperature T
Collector current I
Output current I
T
40
a
= 85°C
−25°C
V
h
P
25°C
FE
T
IN
 T
 I
10
 I
10
80
C
a
O
O
C
V
( mA )
V
T
( mA )
CE
a
a
O
= 25°C
( °C )
= 0.2 V
= 10 V
120
100
100
80
60
40
20
10
0
1
0
0
Collector-emitter voltage V
0.8 mA
Collector-base voltage V
0.9 mA
2
SJH00057BED
10
C
I
4
C
ob
 V
 V
20
6
CE
CB
8
f = 1 MHz
T
I
T
30
B
a
a
= 25°C
CB
= 1.0 mA
= 25°C
CE
10
0.7 mA
0.6 mA
0.5 mA
0.4 mA
0.3 mA
0.2 mA
0.1 mA
(V)
(V)
12
40
0.01
100
0.1
10
10
1
1
0.1
0
I
C
/ I
25°C
Collector current I
B
Input voltage V
= 10
1
V
CE(sat)
I
T
O
a
1
 V
= 85°C
10
 I
IN
−25°C
IN
C
C
V
T
100
a
( V )
(mA)
O
= 25°C
= 5 V
2
1 000