MMUN2116LT1G ON Semiconductor, MMUN2116LT1G Datasheet - Page 12

• Manufacturer Part Number: MMUN2116LT1G
• Description: TRANS BRT PNP 50V SOT-23
• Manufacturer: ON Semiconductor

Specifications of MMUN2116LT1G

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 246mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Collector Emitter Voltage V(br)ceo: 50V
• Base Input Resistor R1: 4.7kohm
• Rf Transistor Case: SOT-23
• No. Of Pins: 3
• Continuous Collector Current Max: 100mA
• Current Rating: 100mA
• Dc Current Gain Min (hfe): 160
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Product Bulletin #16134
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Issue Date: 11 Jul 2008
Rev.07-02-06
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