DTC114TET1G ON Semiconductor, DTC114TET1G Datasheet - Page 3

• Manufacturer Part Number: DTC114TET1G
• Description: TRANS NPN 50V 100MA 10K SC75-3
• Manufacturer: ON Semiconductor

Specifications of DTC114TET1G

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416
• Collector Emitter Voltage V(br)ceo: 50V
• Continuous Collector Current Ic: 100mA
• Base Input Resistor R1: 10kohm
• Rf Transistor Case: SC-75
• No. Of Pins: 3
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Collector−Base Cutoff Current (V
Collector−Emitter Cutoff Current (V
Emitter−Base Cutoff Current
Collector−Base Breakdown Voltage (I
Collector−Emitter Breakdown Voltage (Note 3)
DC Current Gain
Collector−Emitter Saturation Voltage (I
Output Voltage (on)
Output Voltage (off) (V
(V
(I
(V
(I
(I
(V
(V
(V
(V
(V
C
C
C
EB
CE
CC
CC
CC
CC
CC
DTC143EET1/DTC143ZET1/DTC124XET1
= 2.0 mA, I
= 10 mA, I
= 10 mA, I
= 6.0 V, I
= 10 V, I
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
C
B
B
C
B
B
B
B
B
B
= 5.0 mA)
= 5 mA) DTC123EET1
= 1 mA) DTC143TET1/DTC114TET1/
= 0)
= 0)
= 2.5 V, R
= 3.5 V, R
= 5.5 V, R
= 4.0 V, R
= 0.25 V, R
CC
Characteristic
= 5.0 V, V
(Note 3)
L
L
L
L
L
= 1.0 kW)
= 1.0 kW)
= 1.0 kW)
= 1.0 kW)
= 1.0 kW)
CB
CE
B
= 50 V, I
C
= 0.5 V, R
= 50 V, I
C
= 10 mA, I
= 10 mA, I
(T
A
= 25°C unless otherwise noted)
E
DTC114EET1
DTC124EET1
DTC144EET1
DTC114YET1
DTC114TET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC115EET1
DTC144WET1
DTC114EET1
DTC124EET1
DTC144EET1
DTC114YET1
DTC114TET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC115EET1
DTC144WET1
DTC114EET1
DTC124EET1
DTC114YET1
DTC114TET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC144EET1
DTC115EET1
DTC144WET1
= 0)
B
DTC143TET1
DTC143ZET1
DTC114TET1
L
= 0)
E
= 1.0 kW)
= 0)
B
DTC114EET1 Series
= 0.3 mA)
http://onsemi.com
3
V
V
Symbol
V
(BR)CBO
(BR)CEO
CE(sat)
I
I
I
V
V
CBO
CEO
h
EBO
OH
FE
OL
Min
160
160
8.0
35
60
80
80
15
80
80
80
80
80
4.9
50
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ
100
140
140
350
350
200
150
140
150
140
60
15
30
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.18
0.13
0.05
0.13
100
500
0.25
0.2
0.9
1.9
2.3
1.5
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.5
0.2
0.1
0.2
0.2
0.2
0.2
0.2
0.2
0.2
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
Vdc