MUN2214T1G ON Semiconductor, MUN2214T1G Datasheet - Page 11

• Manufacturer Part Number: MUN2214T1G
• Description: TRANS BRT NPN 100MA 50V SC59
• Manufacturer: ON Semiconductor

Specifications of MUN2214T1G

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 338mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Collector Emitter Voltage V(br)ceo: 50V
• Continuous Collector Current Ic: 100mA
• Base Input Resistor R1: 10kohm
• Base-emitter Resistor R2: 47kohm
• Resistor Ratio, R1 / R2: 0.21
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MUN2214T1GOS

0.001
4.5
3.5
2.5
1.5
0.5
0.01
0.1
4
3
2
1
0
0
1
0
5
I
C
/I
V
B
R
10
Figure 29. Output Capacitance
= 10
, REVERSE BIAS VOLTAGE (VOLTS)
10
I
C
Figure 27. V
, COLLECTOR CURRENT (mA)
15
-25°C
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2216T1
20
20
25
0.1
CE(sat)
25°C
10
1
0
Figure 31. Input Voltage versus Output Current
30
T
30
A
versus I
75°C
= -25°C
75°C
35
10
I
C
f = 1 MHz
I
T
E
40
A
, COLLECTOR CURRENT (mA)
C
= 0 V
40
MUN2211T1 Series
= 25°C
25°C
http://onsemi.com
45
20
50
50
11
0.001
1000
0.01
100
30
100
0.1
10
10
1
1
0
1
Figure 30. Output Current versus Input Voltage
75°C
T
V
1
A
O
T
40
= -25°C
A
= 0.2 V
= -25°C
2
Figure 28. DC Current Gain
I
V
C
25°C
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
3
50
4
5
10
75°C
25°C
6
7
V
O
V
8
CE
= 5 V
= 10 V
9
100
10