NSBC114EF3T5G ON Semiconductor, NSBC114EF3T5G Datasheet

TRANS BRT PNP DGTL SOT-1123

NSBC114EF3T5G

Manufacturer Part Number
NSBC114EF3T5G
Description
TRANS BRT PNP DGTL SOT-1123
Manufacturer
ON Semiconductor
Datasheet

Specifications of NSBC114EF3T5G

Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
35 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
254mW
Mounting Type
Surface Mount
Package / Case
SOT-1123
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NSBC114EF3T5G Series
Digital Transistors (BRT)
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
device and its external resistor bias network. The digital transistor
contains a single transistor with a monolithic bias network consisting
of two resistors; a series base resistor and a base−emitter resistor. The
digital transistor eliminates these individual components by
integrating them into a single device. The use of a digital transistor can
reduce both system cost and board space. The device is housed in the
SOT−1123 package which is designed for low power surface mount
applications.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 3
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
This new series of digital transistors is designed to replace a single
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT−1123 Package can be Soldered using Wave or Reflow.
Available in 4 mm, 8000 Unit Tape & Reel
These are Pb−Free Devices
These are Halide−Free Devices
Rating
(T
A
= 25°C unless otherwise noted)
Preferred Devices
Symbol
V
V
CBO
CEO
I
C
Value
100
50
50
1
mAdc
Unit
Vdc
Vdc
†For information on tape and reel specifications,
NSBC114EF3T5G SOT−1123
See specific marking information in the device marking table
on page 2 of this data sheet.
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
(INPUT)
DEVICE MARKING INFORMATION
BASE
Device
PIN 1
NPN SILICON DIGITAL
ORDERING INFORMATION
x
M
G or G
MARKING DIAGRAM
TRANSISTORS
http://onsemi.com
R1
R2
CASE 524AA
3
= Device Code
= Date Code
= Pb−Free Package
SOT−1123
(Pb−Free)
STYLE 1
Package
x M
Publication Order Number:
1
1
(GROUND)
2
EMITTER
COLLECTOR
8000/Tape & Reel
PIN 2
(OUTPUT)
NSBC114EF3/D
PIN 3
Shipping

Related parts for NSBC114EF3T5G

NSBC114EF3T5G Summary of contents

Page 1

... Date Code Pb−Free Package ORDERING INFORMATION Device Package Shipping NSBC114EF3T5G SOT−1123 8000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet ...

Page 2

... Thermal Resistance Junction−to−Lead 3 (Note 1) Junction and Storage Temperature 2 1. FR−4 @ 100 oz. copper traces, still air FR−4 @ 500 oz. copper traces, still air. DEVICE MARKING AND RESISTOR VALUES Device Marking* NSBC114EF3T5G A (0°) NSBC124EF3T5G L (0°) NSBC144EF3T5G D (0°) NSBC114YF3T5G NSBC123TF3T5G T (0°) NSBC143EF3T5G P (0°) NSBC143ZF3T5G R (0° ...

Page 3

... NSBC144WF3T5G (BR)CBO V (BR)CEO NSBC114EF3T5G h FE NSBC124EF3T5G NSBC144EF3T5G NSBC114YF3T5G NSBC143EF3T5G NSBC143ZF3T5G NSBC123JF3T5G NSBC144WF3T5G = 10 mA 0.3 mA CE(sat NSBC114TF3T5G NSBC114EF3T5G NSBC124EF3T5G NSBC114YF3T5G NSBC123TF3T5G NSBC143EF3T5G NSBC143ZF3T5G NSBC123JF3T5G NSBC144EF3T5G NSBC144WF3T5G NSBC115TF3T5G http://onsemi.com 3 Min Typ Max Unit − − 100 nAdc − − 500 nAdc − ...

Page 4

... NSBC123TF3T5G/NSBC143ZF3T5G/NSBC114TF3T5G/ NSBC115TF3T5G Input Resistor Resistor Ratio NSBC114EF3T5G/NSBC124EF3T5G/ NSBC144EF3T5G/NSBC123EF3T5G NSBC114TF3T5G/NSBC115TF3T5G/NSBC123TF3T5G 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0 25°C unless otherwise noted) A Symbol Symbol = 1.0 kW NSBC114TF3T5G R1 NSBC114EF3T5G NSBC124EF3T5G NSBC144EF3T5G NSBC114YF3T5G NSBC123TF3T5G NSBC143EF3T5G NSBC143ZF3T5G NSBC123JF3T5G NSBC144WF3T5G NSBC115TF3T5G NSBC114YF3T5G NSBC143ZF3T5G NSBC123JF3T5G NSBC144WF3T5G http://onsemi.com ...

Page 5

... TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EF3T5G 1 25° 150° −55° COLLECTOR CURRENT (mA) C Figure 1. V vs. I CE(sat) 2.40 2.20 2.00 1.80 1.60 1.40 1.20 1.00 0. COLLECTOR BASE VOLTAGE (V) CB Figure 3. Output Capacitance 10 1.0 0. Figure 5. Input Voltage vs. Output Current ...

Page 6

TYPICAL APPLICATIONS FOR NPN BRTs +12 V FROM mP OR OTHER LOGIC Figure 6. Level Shifter: Connects Volt Circuits to Logic V CC OUT IN Figure 7. Open Collector Inverter: Inverts the Input Signal http://onsemi.com ISOLATED LOAD ...

Page 7

... H E *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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