NSBC124EF3T5G ON Semiconductor, NSBC124EF3T5G Datasheet - Page 2

• Manufacturer Part Number: NSBC124EF3T5G
• Description: TRANS DUAL PBRT PNP SOT-1123
• Manufacturer: ON Semiconductor

Specifications of NSBC124EF3T5G

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 22K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 254mW
• Mounting Type: Surface Mount
• Package / Case: SOT-1123
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1. FR−4 @ 100 mm
2. FR−4 @ 500 mm
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
*(XX°) = Degree rotation in the clockwise direction.
THERMAL CHARACTERISTICS
DEVICE MARKING AND RESISTOR VALUES
Specifications Brochure, BRD8011/D.
Total Device Dissipation
T
Derate above 25°C
Thermal Resistance (Note 1)
Junction-to-Ambient
Total Device Dissipation
T
Derate above 25°C
Thermal Resistance Junction-to-Ambient (Note 2)
Junction and Storage Temperature
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Thermal Resistance Junction−to−Lead 3 (Note 1)
A
A
= 25°C (Note 1)
= 25°C (Note 2)
Device
2
2
, 1 oz. copper traces, still air.
, 1 oz. copper traces, still air.
Characteristic
Marking*
K (90°)
P (90°)
D (0°)
R (0°)
Q (0°)
A (0°)
L (0°)
T (0°)
P (0°)
V (0°)
J (0°)
http://onsemi.com
R1 (k)
100
2.2
4.7
4.7
2.2
10
22
47
10
47
10
2
R2 (k)
Symbol
T
4.7
10
22
47
47
47
47
22
∞
∞
∞
R
R
R
J
P
P
, T
qJA
qJA
qJL
D
D
stg
SOT−1123
(Pb−Free)
Package
−55 to +150
Max
254
493
297
421
193
2.0
2.4
8000/Tape & Reel
Shipping
mW/°C
mW/°C
°C/W
°C/W
°C/W
Unit
mW
mW
°C
†