MMUN2111LT1 ON Semiconductor, MMUN2111LT1 Datasheet

TRANS BRT PNP 100MA 50V SOT23

MMUN2111LT1

Manufacturer Part Number
MMUN2111LT1
Description
TRANS BRT PNP 100MA 50V SOT23
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMUN2111LT1

Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
35 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
246mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MMUN2111LT1OSCT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMUN2111LT1
Manufacturer:
ONSEMI
Quantity:
5 800
Part Number:
MMUN2111LT1
Manufacturer:
ONSemi
Quantity:
25 236
Part Number:
MMUN2111LT1G
Manufacturer:
ON Semiconductor
Quantity:
20 000
Part Number:
MMUN2111LT1G
Manufacturer:
ON
Quantity:
27 000
Part Number:
MMUN2111LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMUN2111LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MMUN2111LT1G
0
Company:
Part Number:
MMUN2111LT1G
Quantity:
24 000
Company:
Part Number:
MMUN2111LT1G
Quantity:
60 000
MMUN2111LT1G Series
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 10
THERMAL CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Device Dissipation
T
Derate above 25°C
Thermal Resistance,
Thermal Resistance,
Junction and Storage,
Temperature Range
This new series of digital transistors is designed to replace a single
A
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
Compliant
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT-23 package can be soldered using wave or reflow. The
Available in 8 mm embossed tape and reel.
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
= 25°C
Characteristic
Junction-to-Ambient
Junction-to-Lead
Rating
(T
A
= 25°C unless otherwise noted)
Symbol
Symbol
T
V
V
R
R
J
P
CBO
CEO
, T
I
qJA
qJL
C
D
stg
246 (Note 1)
400 (Note 2)
508 (Note 1)
174 (Note 1)
208 (Note 2)
311 (Note 2)
−55 to +150
2.0 (Note 1)
3.2 (Note 2)
Value
Max
100
50
50
1
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
mW
°C
MMUN21xxLT1G
MMUN21xxLT3G
†For information on tape and reel specifications,
See specific marking information in the device marking table
on page 2 of this data sheet.
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device
PIN 1
BASE
(INPUT)
*Date Code orientation may vary depending
(Note: Microdot may be in either location)
DEVICE MARKING INFORMATION
upon manufacturing location.
1
CASE 318
A6x
x
M
G
STYLE 6
SOT−23
ORDERING INFORMATION
2
http://onsemi.com
R1
= Device Code
= A − L (Refer to page 2)
= Date Code*
= Pb−Free Package
R2
3
(Pb−Free)
(Pb−Free)
Package
SOT−23
SOT−23
Publication Order Number:
10000/Tape & Reel
1
3000/Tape & Reel
MMUN2111LT1/D
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
MARKING
DIAGRAM
Shipping
A6x M G
G

Related parts for MMUN2111LT1

MMUN2111LT1 Summary of contents

Page 1

... MMUN2111LT1G Series Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors ...

Page 2

... SOT−23 A6H 2.2 SOT−23 A6J 4.7 SOT−23 A6K 4.7 SOT−23 A6L 25°C unless otherwise noted) A Symbol = CBO = CEO MMUN2111LT1G I EBO MMUN2112LT1G MMUN2113LT1G MMUN2114LT1G MMUN2115LT1G MMUN2116LT1G MMUN2130LT1G MMUN2131LT1G MMUN2132LT1G MMUN2133LT1G MMUN2134LT1G = (BR)CBO V (BR)CEO http://onsemi.com 2 R2 (K) Shipping 10 3000/Tape & Reel 10,000/Tape & ...

Page 3

... MMUN2112LT1G MMUN2113LT1G MMUN2114LT1G MMUN2133LT1G MMUN2130LT1G MMUN2131LT1G MMUN2115LT1G MMUN2116LT1G MMUN2132LT1G MMUN2134LT1G V MMUN2111LT1G MMUN2112LT1G MMUN2114LT1G MMUN2115LT1G MMUN2116LT1G MMUN2130LT1G MMUN2131LT1G MMUN2132LT1G MMUN2133LT1G MMUN2134LT1G MMUN2113LT1G V MMUN2111LT1G MMUN2112LT1G MMUN2113LT1G MMUN2114LT1G MMUN2133LT1G MMUN2134LT1G MMUN2115LT1G MMUN2116LT1G MMUN2131LT1G MMUN2132LT1G MMUN2130LT1G http://onsemi.com 3 Min Typ Max 35 60 − 100 − ...

Page 4

... Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2. 25°C unless otherwise noted) (Continued) A Symbol MMUN2111LT1G R1 MMUN2112LT1G MMUN2113LT1G MMUN2114LT1G MMUN2115LT1G MMUN2116LT1G MMUN2130LT1G MMUN2131LT1G MMUN2132LT1G MMUN2133LT1G MMUN2134LT1G MMUN2111LT1G R 1 MMUN2112LT1G MMUN2113LT1G MMUN2114LT1G MMUN2115LT1G MMUN2116LT1G MMUN2130LT1G MMUN2131LT1G MMUN2132LT1G MMUN2133LT1G MMUN2134LT1G http://onsemi.com 4 Min Typ Max 7 ...

Page 5

... AMBIENT TEMPERATURE (°C) A Figure 1. Derating Curve 1000 100 COLLECTOR CURRENT (mA) C Figure 3. DC Current Gain 100 25°C 75° -25° 0.1 0.01 0.001 INPUT VOLTAGE (VOLTS) in Figure 5. Output Current versus Input Voltage MMUN2111LT1 0.1 0.01 100 150 75°C A 25°C 2 -25° 100 0 100 ...

Page 6

TYPICAL ELECTRICAL CHARACTERISTICS 0.1 0. COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat REVERSE ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat) 1 0.8 0.6 0.4 0 ...

Page 8

TYPICAL ELECTRICAL CHARACTERISTICS -25°C A 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1.5 1 ...

Page 9

TYPICAL ELECTRICAL CHARACTERISTICS 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 22. V versus I CE(sat ...

Page 10

TYPICAL ELECTRICAL CHARACTERISTICS 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 27. V versus I CE(sat ...

Page 11

TYPICAL ELECTRICAL CHARACTERISTICS 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 32. V versus I CE(sat ...

Page 12

TYPICAL ELECTRICAL CHARACTERISTICS 0.1 −25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 37. V CE(sat ...

Page 13

... L1 H 2.10 2.40 2.64 0.083 0.094 E STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR 2.0 mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMUN2111LT1/D MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 ...

Related keywords